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Machine translation
1. (WO2012108011) POWER SEMICONDUCTOR MODULE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/108011    International Application No.:    PCT/JP2011/052742
Publication Date: 16.08.2012 International Filing Date: 09.02.2011
IPC:
H01L 23/48 (2006.01), H01L 23/28 (2006.01), H01L 25/07 (2006.01), H01L 25/18 (2006.01)
Applicants: Mitsubishi Electric Corporation [JP/JP]; 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310 (JP) (For All Designated States Except US).
ASADA Shinsuke [--/JP]; (JP) (For US Only).
NAGAO Kenjiro [--/JP]; (JP) (For US Only).
NAKAJIMA Dai [--/JP]; (JP) (For US Only).
WATANABE Yuetsu [--/JP]; (JP) (For US Only).
ASAO Yoshihito [--/JP]; (JP) (For US Only).
OGA Takuya [--/JP]; (JP) (For US Only).
KATO Masaki [--/JP]; (JP) (For US Only)
Inventors: ASADA Shinsuke; (JP).
NAGAO Kenjiro; (JP).
NAKAJIMA Dai; (JP).
WATANABE Yuetsu; (JP).
ASAO Yoshihito; (JP).
OGA Takuya; (JP).
KATO Masaki; (JP)
Agent: OIWA Masuo; 35-8, Minamimukonoso 3-chome, Amagasaki-shi, Hyogo 6610033 (JP)
Priority Data:
Title (EN) POWER SEMICONDUCTOR MODULE
(FR) MODULE MODULE SEMI-CONDUCTEUR DE PUISSANCE
(JA) パワー半導体モジュール
Abstract: front page image
(EN)A power semiconductor module (100) is provided with: electrode plates (2) having an integrated body (2a) and an external connection terminal (2b), the bodies (2a) being in a coplanar arrangement; a semiconductor element (1) carried on one surface (carrying surface) (2c) of the body (2a); and a resin package (3) in which the other surface (radiating surface) (2d) of the body (2a) is exposed, and the semiconductor element (1) and the body (2a) of the electrode plates (2) are sealed using a resin. The radiating surface (2d) and a bottom surface (3a) of the resin package (3) are coplanar. It is thereby possible to improve heat-radiating performance and reliability as well as to reduce size.
(FR)L'invention concerne un module semi-conducteur de puissance (100) équipé : de plaques électrodes (2) ayant un corps intégré (2a) et d'une borne de connexion externe (2b), les corps (2a) étant dans une configuration coplanaire ; un élément semi-conducteur (1) porté sur une surface (surface porteuse) du corps (2a) ; et un ensemble de résine (3) dans lequel l'autre surface (surface de rayonnement) (2d) du corps (2a) est exposée, et l'élément semi-conducteur (1) et le corps (2a) des plaques électrodes (2) sont collés au moyen d'une résine. La surface de rayonnement (2d) et la surface de fond (3a) de l'ensemble de résine (3) sont coplanaires. Il est donc possible d'améliorer l'efficacité et la fiabilité du rayonnement thermique, mais aussi de réduire la taille.
(JA) パワー半導体モジュール100は、本体部2aと外部接続端子部2bとが一体に形成され、本体部2aが同一平面上に配置された電極板2と、本体部2aの一方の面(載置面)2cに載置された半導体素子1と、本体部2aの他方の面(放熱面)2dが露出され、電極板2の本体部2a及び半導体素子1を樹脂により封止した樹脂パッケージ3と、を備えこの放熱面2dと樹脂パッケージ3の底面3aとは、同一面となっている。これにより、放熱性及び信頼性を向上させ、かつ小型化を図ることができる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)