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1. (WO2012107638) SENSING OF PHOTONS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/107638    International Application No.:    PCT/FI2012/050102
Publication Date: 16.08.2012 International Filing Date: 03.02.2012
H01L 27/146 (2006.01), H01L 29/16 (2006.01)
Applicants: NOKIA CORPORATION [--/FI]; Keilalahdentie 4 FI-02150 Espoo (FI) (For All Designated States Except US).
VOUTILAINEN, Martti [FI/FI]; (FI) (For US Only).
ROUVALA, Markku [FI/FI]; (FI) (For US Only).
PASANEN, Pirjo [FI/FI]; (FI) (For US Only)
Inventors: VOUTILAINEN, Martti; (FI).
ROUVALA, Markku; (FI).
PASANEN, Pirjo; (FI)
Agent: ESPATENT OY; Kaivokatu 10 D FI-00100 Helsinki (FI)
Priority Data:
13/025,853 11.02.2011 US
Abstract: front page image
(EN)In accordance with an example embodiment of the present invention,an apparatus is provided, including a photodetecting structure with one or more photon sensing layers of graphene; and an integrated graphene field effect transistor configured to function as a pre-amplifier for the photodetecting structure, where the graphene field effect transistor is vertically integrated to the photodetecting structure.
(FR)Selon un mode de réalisation à titre d'exemple, l'invention concerne un appareil comprenant une structure de photo-détection comportant une ou plusieurs couches de détection de photons en graphène, et un transistor à effet de champ en graphène intégré conçu pour fonctionner comme un préamplificateur pour la structure de photo-détection, ledit transistor à effet de champ en graphène étant intégré verticalement dans la structure de photo-détection.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)