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1. (WO2012106814) HIGH EFFICIENCY BROADBAND SEMICONDUCTOR NANOWIRE DEVICES AND METHODS OF FABRICATING WITHOUT FOREIGN METAL CATALYSIS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/106814    International Application No.:    PCT/CA2012/000135
Publication Date: 16.08.2012 International Filing Date: 10.02.2012
IPC:
H01L 21/20 (2006.01), B82Y 10/00 (2011.01), B82Y 40/00 (2011.01), G01N 27/00 (2006.01), H01L 29/20 (2006.01), H01L 29/66 (2006.01), H01L 29/868 (2006.01), H01L 31/06 (2012.01), H01L 31/101 (2006.01), H01L 33/06 (2010.01), H01S 5/34 (2006.01)
Applicants: THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/MCGILL UNIVERSITY [CA/CA]; Office of Sponsored Research, James Administration 845 Sherbrooke Street West, 2nd Floor Montreal. QC H3A 2T5 (CA) (For All Designated States Except US).
Ml, Zetian [CN/CA]; (CA) (For US Only).
CUI, Kai [CN/CA]; (CA) (For US Only).
NGUYEN, Hieu Pham Trung [VN/CA]; (CA) (For US Only)
Inventors: Ml, Zetian; (CA).
CUI, Kai; (CA).
NGUYEN, Hieu Pham Trung; (CA)
Agent: KLOTZ, Trevor, C.; Perley-Robertson, Hill & McDougall LLP/s.r.l. 1400-340 Albert Street Ottawa, Ontario K1R 0A5 (CA)
Priority Data:
61/441,310 10.02.2011 US
61/558,483 11.11.2011 US
Title (EN) HIGH EFFICIENCY BROADBAND SEMICONDUCTOR NANOWIRE DEVICES AND METHODS OF FABRICATING WITHOUT FOREIGN METAL CATALYSIS
(FR) DISPOSITIFS À NANOFILS SEMI-CONDUCTEURS À LARGE BANDE ET PROCÉDÉS DE FABRICATION SANS CATALYSEURS EN MÉTAL ÉTRANGERS
Abstract: front page image
(EN)Amongst the candidates for very high efficiency solid state light sources and full solar spectrum solar cells are devices based upon InGaN nanowires. Additionally these nanowires typically require heterostructures, quantum dots, etc which all place requirements for these structures to be grown with relatively few defects and in a controllable reproducible manner. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. According to the invention a method of growing relatively defect free nanowires and associated structures for group IIIA-nitrides is presented without the requirement for foreign metal catalysts and overcoming the non-uniform growth of prior art non-catalyst growth techniques. According to other embodiments of the invention self-organizing dot-within-a-dot nanowire and dot-within-a-dot-within-a-well nanowire structures are presented.
(FR)Parmi les candidats pour les sources de lumière à l'état solide à très haut rendement et les cellules solaires sur le spectre solaire complet, on compte les dispositifs à base de nanofils d'InGaN. De plus, ces nanofils requièrent typiquement des hétérostructures, points quantiques, etc. qui placent tous des besoins pour ces structures de croissance avec relativement peu de défauts et de manière reproductible contrôlable. De plus, la flexibilité en fonction de la conception du dispositif requiert que le nanofil sur le substrat soit de l'InN ou du GaN. Selon l'invention, un procédé de croissance de nanofils relativement sans défauts et des structures associées pour les nitrures du groupe IIIA est présenté sans le besoin de catalyseurs de métal étrangers et surmontant la croissance non uniforme des techniques de croissances sans catalyseur de l'état de la technique. Selon d'autres modes de réalisation de l'invention, des structures nanofil point dans un point auto-organisé et de nanofil point dans un point dans un puits sont présentées.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)