WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2012106600) IN SITU VAPOR PHASE SURFACE ACTIVATION OF SIO2
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/106600    International Application No.:    PCT/US2012/023778
Publication Date: 09.08.2012 International Filing Date: 03.02.2012
IPC:
H01L 21/205 (2006.01), H01L 21/316 (2006.01)
Applicants: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, CA 95054 (US) (For All Designated States Except US).
SATO, Tatsuya, E. [JP/US]; (US) (For US Only).
THOMPSON, David [CA/US]; (US) (For US Only).
ANTHIS, Jeffrey, W. [US/US]; (US) (For US Only).
ZUBKOV, Vladimir [US/US]; (US) (For US Only).
VERHAVERBEKE, Steven [BE/US]; (US) (For US Only).
GOUK, Roman [UA/US]; (US) (For US Only).
MAHAJANI, Maitreyee [US/US]; (US) (For US Only).
LIU, Patricia, M. [US/US]; (US) (For US Only).
BEVAN, Malcolm, J. [US/US]; (US) (For US Only)
Inventors: SATO, Tatsuya, E.; (US).
THOMPSON, David; (US).
ANTHIS, Jeffrey, W.; (US).
ZUBKOV, Vladimir; (US).
VERHAVERBEKE, Steven; (US).
GOUK, Roman; (US).
MAHAJANI, Maitreyee; (US).
LIU, Patricia, M.; (US).
BEVAN, Malcolm, J.; (US)
Agent: ALEGRIA, Rory, P.; Diehl Servilla LLC 33 Wood Avenue South Second Floor, Suite 210 Iselin, NJ 08830 (US)
Priority Data:
61/439,686 04.02.2011 US
13/192,041 27.07.2011 US
Title (EN) IN SITU VAPOR PHASE SURFACE ACTIVATION OF SIO2
(FR) ACTIVATION DE SURFACE EN PHASE VAPEUR IN SITU DE SIO2
Abstract: front page image
(EN)Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water below the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.
(FR)L'invention concerne des procédés de préparation d'un substrat pour un procédé ultérieur de formation de film. L'invention concerne également des procédés de préparation d'un substrat pour un procédé ultérieur de formation de film, sans immersion dans une solution aqueuse. Le procédé décrit consiste à disposer un substrat dans une chambre de traitement, le substrat ayant une surface d'oxyde thermique n'ayant sensiblement pas de terminaisons de surface réactives. La surface d'oxyde thermique est exposée à une pression partielle d'eau, au-dessus de la pression de vapeur saturante, à une température du substrat pour convertir l'oxyde thermique dense n'ayant sensiblement pas de terminaisons de surface réactives en une surface ayant des terminaisons de surface hydroxyle. Ceci peut se produire en présence d'une base de Lewis telle que l'ammoniac.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)