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Machine translation
1. (WO2012106439) MEMORY DEVICES WITH A CONNECTING REGION HAVING A BAND GAP LOWER THAN A BAND GAP OF A BODY REGION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/106439    International Application No.:    PCT/US2012/023499
Publication Date: 09.08.2012 International Filing Date: 01.02.2012
IPC:
H01L 27/115 (2006.01), H01L 21/8247 (2006.01)
Applicants: MICRON TECHNOLOGY, INC. [US/US]; 8000 So. Federal Way Boise, Idaho 83716-9632 (US) (For All Designated States Except US).
LIU, Haitao [CN/US]; (US) (For US Only).
LI, Jian [CN/US]; (US) (For US Only).
MOULI, Chandra [US/US]; (US) (For US Only)
Inventors: LIU, Haitao; (US).
LI, Jian; (US).
MOULI, Chandra; (US)
Agent: MADDEN, Robert, B.; Schwegman, Lundberg, & Woessner, P. A. P.O. Box 2938 Minneapolis, Minnesota 55402-0938 (US)
Priority Data:
13/020,337 03.02.2011 US
Title (EN) MEMORY DEVICES WITH A CONNECTING REGION HAVING A BAND GAP LOWER THAN A BAND GAP OF A BODY REGION
(FR) MÉMOIRE AVEC ZONE DE CONNEXION COMPRENANT UNE BANDE INTERDITE INFÉRIEURE À UNE BANDE INTERDITE D'UNE ZONE CORPORELLE
Abstract: front page image
(EN)Memory devices are shown that include a body region and a connecting region that is formed from a semiconductor with a lower band gap than the body region. Connecting region configurations can provide increased gate induced drain leakage during an erase operation. Configurations shown can provide a reliable bias to a body region for memory operations such as erasing, and containment of charge in the body region during a boost operation.
(FR)L'invention concerne des dispositifs mémoire comprenant une zone de corps et une zone de connexion formée à partir d'un semi-conducteur ayant une bande interdite inférieure à celle de la zone corporelle. Les configurations de la zone de connexion peuvent augmenter la fuite de drain induite par la grille pendant une opération d'effacement. Les configurations affichées peuvent fournir un biais fiable à une région de corps pour les opérations de mémoire telles que l'effacement, et le confinement de charge dans la zone corporelle pendant une opération de démarrage.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)