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1. (WO2012105800) NANO POWER-GENERATING DEVICE, AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/105800    International Application No.:    PCT/KR2012/000748
Publication Date: 09.08.2012 International Filing Date: 31.01.2012
IPC:
H01L 41/02 (2006.01), H01L 41/16 (2006.01), H01L 41/22 (2013.01), H02N 2/00 (2006.01)
Applicants: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY [KR/KR]; 2066, Seobu-ro, Jangan-gu Suwon-si Gyeonggi-do 440-746 (KR) (For All Designated States Except US).
KIM, Sang Woo [KR/KR]; (KR) (For US Only).
LEE, Ju Hyuck [KR/KR]; (KR) (For US Only).
LEE, Kang Hyuck [KR/KR]; (KR) (For US Only).
LEE, Keun Young [KR/KR]; (KR) (For US Only).
LEE, Jin Yeong [KR/KR]; (KR) (For US Only).
SEUNG, Wan Chul [KR/KR]; (KR) (For US Only)
Inventors: KIM, Sang Woo; (KR).
LEE, Ju Hyuck; (KR).
LEE, Kang Hyuck; (KR).
LEE, Keun Young; (KR).
LEE, Jin Yeong; (KR).
SEUNG, Wan Chul; (KR)
Agent: PARK, Jong Soo; Halla Sigma Valley 303ho 345-90, Gasan-dong, Geumcheon-gu Seoul 153-706 (KR)
Priority Data:
10-2011-0009837 31.01.2011 KR
10-2012-0009576 31.01.2012 KR
Title (EN) NANO POWER-GENERATING DEVICE, AND METHOD FOR MANUFACTURING SAME
(FR) NANOGÉNÉRATEUR ET SON PROCÉDÉ DE FABRICATION
(KO) 나노전력발전소자 및 이의 제조방법
Abstract: front page image
(EN)The invention relates to a nano power-generating device, comprising: a base substrate; a hexagonal boron-nitride atomic layer formed on the base substrate; a first electrode formed on the hexagonal boron-nitride atomic layer; and a second electrode formed on the hexagonal boron-nitride atomic layer and spaced apart from the first electrode. The nano power-generating device of the present invention may operate in a continuous and independent manner using the piezoelectric characteristics of the hexagonal boron-nitride atomic layer.
(FR)Cette invention concerne un nanogénérateur, comprenant : un substrat de base è une couche atomique à base de nitrure de bore hexagonal formée sur le substrat de base; une première électrode formée sur la couche atomique à base de nitrure de bore hexagonal; et une seconde électrode formée sur la couche atomique à base de nitrure de bore hexagonal et espacée de la première électrode. Ledit nanogénérateur peut fonctionner de manière continue et autonome par mise en œuvre des caractéristiques piézoélectriques de la couche atomique à base de nitrure de bore hexagonal.
(KO)나노전력발전소자는 베이스 기판과, 상기 베이스 기판 상에 구비되는 육방정계 질화붕소 원자층과, 상기 육방정계 질화붕소 원자층 상에 구비되는 제1 전극 및 상기 육방정계 질화붕소 원자층 상에 구비되며, 상기 제1 전극과 이격되는 제2 전극을 포함한다. 육방정계 질화붕소 원자층의 압전 특성을 이용하여 나노전력발전소자가 지속적이고 독립적으로 구동할 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)