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1. (WO2012105514) PRESSURE SENSOR ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/105514    International Application No.:    PCT/JP2012/052021
Publication Date: 09.08.2012 International Filing Date: 30.01.2012
IPC:
G01L 9/08 (2006.01)
Applicants: MIKUNI CORPORATION [JP/JP]; 13-11, Sotokanda 6-chome, Chiyoda-ku, Tokyo 1010021 (JP) (For All Designated States Except US).
TAKAHASHI Kyou [JP/JP]; (JP) (For US Only).
ENDO Haruyuki [JP/JP]; (JP) (For US Only).
FUKUI Katsuhiko [JP/JP]; (JP) (For US Only).
MATSUMOTO Sou [JP/JP]; (JP) (For US Only)
Inventors: TAKAHASHI Kyou; (JP).
ENDO Haruyuki; (JP).
FUKUI Katsuhiko; (JP).
MATSUMOTO Sou; (JP)
Agent: YAMAZAKI Takuya; Sanseiro Bldg. 4F., 2-53, Zushi 5-chome, Zushi-city, Kanagawa 2490006 (JP)
Priority Data:
2011-018715 31.01.2011 JP
Title (EN) PRESSURE SENSOR ELEMENT
(FR) ÉLÉMENT DE CAPTEUR DE PRESSION
(JA) 圧力センサ素子
Abstract: front page image
(EN)[Problem] To provide a pressure sensor element which is not greatly decreased in the resistance due to temperature increase. [Solution] A pressure sensor element which is provided with a piezoelectric element and a high-resistance material film. The piezoelectric element has an upper surface and a lower surface. The high-resistance material film at least partially covers the upper surface and/or the lower surface. The electrical resistance of the high-resistance material film is higher than the electrical resistance of the piezoelectric element.
(FR)L'invention vise à procurer un élément de capteur de pression dont la résistance ne diminue pas considérablement du fait d'une élévation de température. A cet effet, l'invention porte sur un élément de capteur de pression, lequel élément comporte un élément piézoélectrique et un film en matériau de résistance élevée. L'élément piézoélectrique a une surface supérieure et une surface inférieure. Le film de matériau de résistance élevée recouvre au moins partiellement la surface supérieure et/ou la surface inférieure. La résistance électrique du film de matériau de résistance élevée est supérieure à la résistance électrique de l'élément piézoélectrique.
(JA)【課題】温度上昇によって抵抗値が大きく低下することのない圧力センサ素子を提供すること。 【解決手段】圧力センサ素子は、圧電素子と、高抵抗材料膜とを備えている。圧電素子は、上面と下面とを有している。高抵抗材料膜は、上面と下面との少なくとも一方を少なくとも部分的に覆っている。高抵抗材料膜の電気抵抗値は、圧電素子の電気抵抗値よりも大きい。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)