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1. (WO2012105473) BONDED-SUBSTRATE FABRICATION METHOD, BONDED SUBSTRATE, SUBSTRATE BONDING METHOD, BONDED-SUBSTRATE FABRICATION DEVICE, AND SUBSTRATE ASSEMBLY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/105473    International Application No.:    PCT/JP2012/051935
Publication Date: 09.08.2012 International Filing Date: 30.01.2012
IPC:
H01L 21/02 (2006.01), B23K 20/00 (2006.01), B23K 20/14 (2006.01), B23K 20/16 (2006.01), B23K 20/24 (2006.01)
Applicants: SUGA Tadatomo [JP/JP]; (JP).
Bondtech Co., LTD. [JP/JP]; 1-25, Nishinohata, Okubo-cho, Uji-shi, Kyoto 6110033 (JP) (For All Designated States Except US).
TAIYO YUDEN CO., LTD. [JP/JP]; 16-20, Ueno 6-chome, Taito-ku, Tokyo 1100005 (JP) (AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BE, BF, BG, BH, BJ, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CL, CM, CO, CR, CU, CY, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GT, GW, HN, HR, HU, ID, IE, IL, IN, IS, IT, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, ME, MG, MK, ML, MN, MR, MT, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SI, SK, SL, SM, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW only).
LAN TECHNICAL SERVICE CO., LTD. [JP/JP]; 38-2, Yoyogi 1-chome, Shibuya-ku, Tokyo 1510053 (JP) (For All Designated States Except US).
YAMAUCHI Akira [JP/JP]; (JP) (For US Only).
KONDOU Ryuichi [JP/JP]; (JP) (For US Only).
MATSUMOTO Yoshiie [JP/JP]; (JP) (For US Only)
Inventors: SUGA Tadatomo; (JP).
YAMAUCHI Akira; (JP).
KONDOU Ryuichi; (JP).
MATSUMOTO Yoshiie; (JP)
Agent: SONODA Yoshitaka; SONODA & KOBAYASHI, 34th Floor, Shinjuku Mitsui Building, 1-1, Nishi-Shinjuku 2-chome, Shinjuku-ku, Tokyo 1630434 (JP)
Priority Data:
2011-019026 31.01.2011 JP
Title (EN) BONDED-SUBSTRATE FABRICATION METHOD, BONDED SUBSTRATE, SUBSTRATE BONDING METHOD, BONDED-SUBSTRATE FABRICATION DEVICE, AND SUBSTRATE ASSEMBLY
(FR) PROCÉDÉ DE FABRICATION DE SUBSTRAT LIÉ, SUBSTRAT LIÉ, PROCÉDÉ DE LIAISON DE SUBSTRAT, DISPOSITIF DE FABRICATION DE SUBSTRAT LIÉ ET ENSEMBLE SUBSTRAT
(JA) 接合基板作製方法、接合基板、基板接合方法、接合基板作製装置、及び基板接合体
Abstract: front page image
(EN)[Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.
(FR)L'invention a pour but de proposer une technique de liaison de substrat ayant une large plage d'applications. A cet effet, selon l'invention, un film mince de silicium est formé sur une surface de liaison, et l'interface avec le substrat est traitée en surface à l'aide de particules énergétiques/particules métalliques.
(JA) 【課題】適用範囲の広い基板接合技術を提供する。 【解決手段】 接合面内にシリコン薄膜を形成し、基板との境界はエネルギー粒子、金属粒子により、表面処理する。 
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)