WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2012104902) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/104902    International Application No.:    PCT/JP2011/000530
Publication Date: 09.08.2012 International Filing Date: 31.01.2011
IPC:
H01L 21/336 (2006.01), H01L 29/786 (2006.01)
Applicants: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY [JP/JP]; 1-1, Katahira 2-chome, Aoba-ku, Sendai-shi, Miyagi 9808577 (JP) (For All Designated States Except US).
OHMI, Tadahiro [JP/JP]; (JP) (For US Only)
Inventors: OHMI, Tadahiro; (JP)
Agent: OHTSUKA, Yasunori; 7th Fl., Kioicho Park Bldg., 3-6, Kioicho, Chiyoda-ku, Tokyo 1020094 (JP)
Priority Data:
Title (EN) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEURS ET SON PROCÉDÉ DE FABRICATION
(JA) 半導体装置及びその製造方法
Abstract: front page image
(EN)This semiconductor device comprises: a gate electrode provided on a substrate and containing Al and Zr; a gate insulating film provided so as to cover at least the upper surface of the gate electrode and containing Al and Zr, and an insulator layer provided on the substrate so as to surround the gate electrode.
(FR)La présente invention porte sur un dispositif à semi-conducteurs comprenant : une électrode de grille disposée sur un substrat et contenant de l'aluminium (Al) et du zirconium (Zr) ; un film d'isolation de grille disposé de façon à recouvrir au moins la surface supérieure de l'électrode de grille et contenant de l'aluminium (Al) et du zirconium (Zr), et une couche d'isolation disposée sur le substrat de façon à entourer l'électrode de grille.
(JA)半導体装置は、基板上に設けられたAlおよびZrを含むゲート電極と、前記ゲート電極の少なくとも上面を覆うように設けられたAlおよびZrを含むゲート絶縁膜と、前記ゲート電極を取り囲むように前記基板上に設けられた絶縁体層とを含む。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)