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1. (WO2012102765) SHALLOW TRENCH ISOLATION CHEMICAL MECHANICAL PLANARIZATION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/102765    International Application No.:    PCT/US2011/053230
Publication Date: 02.08.2012 International Filing Date: 26.09.2011
IPC:
H01L 21/304 (2006.01), H01L 21/76 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, NY 10504 (US) (For All Designated States Except US).
CHARNS, Leslie [US/US]; (US) (For US Only).
CUMMINGS, Jason, E. [US/US]; (US) (For US Only).
HUPKA, Lukasz, J. [PL/US]; (US) (For US Only).
KOLI, Dinesh, R. [IN/US]; (US) (For US Only).
KONNO, Tomohisa [JP/JP]; (JP) (For US Only).
KRISHNAN, Mahadevaiyer [US/US]; (US) (For US Only).
LOFARO, Michael, F. [US/US]; (US) (For US Only).
NALASKOWSKI, Jakub [PL/US]; (US) (For US Only).
NODA, Masahiro [JP/JP]; (JP) (For US Only).
PENIGALAPATI, Dinesh [IN/US]; (US) (For US Only).
YAMANAKA, Tatsuya [JP/JP]; (JP) (For US Only)
Inventors: CHARNS, Leslie; (US).
CUMMINGS, Jason, E.; (US).
HUPKA, Lukasz, J.; (US).
KOLI, Dinesh, R.; (US).
KONNO, Tomohisa; (JP).
KRISHNAN, Mahadevaiyer; (US).
LOFARO, Michael, F.; (US).
NALASKOWSKI, Jakub; (US).
NODA, Masahiro; (JP).
PENIGALAPATI, Dinesh; (US).
YAMANAKA, Tatsuya; (JP)
Agent: DAVIS, Jennifer; International Business Machines Corporation 2070 Route 52 Bldg. 321 / Zip 482 Hopewell Junction, NY 12533 (US)
Priority Data:
13/012,142 24.01.2011 US
Title (EN) SHALLOW TRENCH ISOLATION CHEMICAL MECHANICAL PLANARIZATION
(FR) PLANARISATION MÉCANICO-CHIMIQUE D'ISOLATION DE TRANCHÉE CREUSE
Abstract: front page image
(EN)A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface.
(FR)La présente invention concerne un procédé de polissage, au cours d'un premier polissage, d'une tranche pour décaper et planariser une couche supérieure, laissant une partie à demeure sur une couche sous-jacente. Une seconde étape de polissage comprend deux phases. Au cours d'une première phase, la couche supérieure est éliminée et la couche sous-jacente est exposée, avec une sélectivité de la couche supérieure à la couche sous-jacente comprise entre environ 1:1 et environ 2:1 pour fournir une topographie planaire. Au cours d'une seconde phase, les parties résiduelles de la couche supérieure sont retirées d'une partie supérieure de la couche sous-jacente pour garantir une exposition complète d'une surface de couche sous-jacente.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)