WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2012102559) SEMICONDUCTOR DEVICE USING GRAPHENE, SEMICONDUCTOR DEVICE USING CARBON NANO-MATERIAL, SEMICONDUCTOR DEVICE ARRAY USING GRAPHENE, AND METHOD FOR FABRICATING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/102559    International Application No.:    PCT/KR2012/000615
Publication Date: 02.08.2012 International Filing Date: 26.01.2012
IPC:
H01L 29/778 (2006.01), H01L 21/336 (2006.01), B82B 3/00 (2006.01)
Applicants: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION [KR/KR]; Anam-dong 5(o)-ga 1, Seongbuk-gu Seoul 136-701 (KR) (For All Designated States Except US).
LEE, Jong Kwon [KR/KR]; (KR) (For US Only).
KIM, Gyu-Tae [KR/KR]; (KR) (For US Only).
KIM, Yongha [KR/KR]; (KR) (For US Only)
Inventors: LEE, Jong Kwon; (KR).
KIM, Gyu-Tae; (KR).
KIM, Yongha; (KR)
Agent: B&IP-JOOWON PATENT AND LAW FIRM; (Nonhyeon-dong) 9th Floor, Construction Center Eonju-ro 711, Gangnam-gu Seoul 135-701 (KR)
Priority Data:
10-2011-0007951 26.01.2011 KR
10-2011-0007973 26.01.2011 KR
10-2012-0000131 02.01.2012 KR
Title (EN) SEMICONDUCTOR DEVICE USING GRAPHENE, SEMICONDUCTOR DEVICE USING CARBON NANO-MATERIAL, SEMICONDUCTOR DEVICE ARRAY USING GRAPHENE, AND METHOD FOR FABRICATING SAME
(FR) DISPOSITIF DE SEMI-CONDUCTEUR FABRIQUÉ À L'AIDE DE GRAPHÈNE, DISPOSITIF DE SEMI-CONDUCTEUR FAISANT INTERVENIR UN NANOMATÉRIAU DE CARBONE, RÉSEAU DE DISPOSITIF DE SEMI-CONDUCTEUR FABRIQUÉ À L'AIDE DE GRAPHÈNE ET PROCÉDÉ DE PRODUCTION ASSOCIÉ
(KO) 그래핀을 이용한 반도체 소자, 탄소 나노 물질을 이용한 반도체 소자, 그래핀을 이용한 반도체 소자 어레이, 및 그 반도체 소자 제조 방법
Abstract: front page image
(EN)A semiconductor device using graphene comprises: a substrate; a pattern layer which is formed in a preset form on the substrate; and a graphene layer which is formed in a preset direction on the pattern layer. Since the graphene layer is formed on the pattern layer which is formed in advance, the structure of the graphene is physically deformed to allow the graphene to have semiconductive properties, so that it becomes possible to fabricate a semiconductor device using graphene. A semiconductor device using carbon nano-material comprises: a pattern layer which is formed on a substrate and has a preset form; an insulating film layer which is formed on the pattern layer; and a preset carbon nano-material layer which is formed on the insulating film layer. Since it is possible for carbon nano-material to have semiconductor properties by only fabricating a gate pattern, to which a gate signal is applied, in a preset form, it becomes possible to fabricate a semiconductor device having superior characteristic by means of carbon nano-material. A semiconductor device which is an electronic or photonic device comprises: a pattern area of a preset form which is formed on a preset position of a substrate; and a graphene layer which is formed on the pattern area. As described above, since the graphene layer is formed on the pattern area formed in advance, the structure of the graphene is physically deformed to allow the graphene to have the semiconductive properties, so that it becomes possible to fabricate a semiconductor device using graphene. In particular, the pattern area includes patterns which have repeated shapes and have mutually different periods, and a pattern of a repeated shape having a long period can be positioned within a pattern of a repeated shape having a short period. According to such a configuration, it is possible to fabricate a photonic device having a quantum well structure using graphene.
(FR)L'invention concerne un dispositif de semi-conducteur faisant intervenir du graphène comprenant : un substrat; une couche de motif qui est formée selon une forme préétablie sur le substrat; et une couche de graphène qui est formée dans une direction préétablie sur la couche de motif. Étant donné que la couche de graphène est formée sur la couche de motif qui est formée à l'avance, la structure du graphène est physiquement déformée pour permettre au graphène d'avoir des propriétés de semi-conducteur, si bien qu'il devient possible de fabriquer un dispositif de semi-conducteur faisant intervenir du graphène. Un dispositif de semi-conducteur faisant intervenir un nanomatériau de carbone comprend : une couche de motif qui est formée sur un substrat et a une forme préétablie; une couche de film isolant qui est formée sur la couche de motif; et une couche de nanomatériau de carbone préétablie qui est formée sur la couche de film isolant. Étant donné qu'il est possible que le nanomatériau de carbone ait des propriétés de semi-conducteur en ne fabriquant qu'un motif de grille, auquel un signal de grille est appliqué, selon une forme préétablie, il devient possible de fabriquer un dispositif de semi-conducteur aux caractéristiques supérieures au moyen d'un nanomatériau de carbone. Un dispositif de semi-conducteur qui est un dispositif électronique ou photonique comprend : une zone de motif d'une forme préétablie qui est formée sur une position préétablie d'un substrat; et une couche de graphène qui est formée sur la zone de motif. Comme décrit ci-dessus, étant donné que la couche de graphène est formée sur la zone de motif formée à l'avance, la structure du graphène est physiquement déformée pour permettre au graphène d'avoir les propriétés de semi-conducteur, si bien qu'il devient possible de fabriquer un dispositif de semi-conducteur faisant intervenir du graphène. En particulier, la zone de motif inclut des motifs qui ont des formes répétées et ont des périodes différentes entre eux, et un motif d'une forme répétée de longue période peut être placé au sein d'un motif d'une forme répétée de courte période. Selon une telle configuration, il est possible de fabriquer un dispositif photonique comportant une structure de puits quantique faisant intervenir du graphène.
(KO)그래핀을 이용한 반도체 소자는 기판, 기판상에 미리 설정된 형태로 형성된 패턴층, 및 패턴층상에 미리 설정된 방향으로 형성된 그래핀층을 포함한다. 그래핀층을 미리 형성된 패턴층상에 형성함으로써 그래핀의 구조가 물리적으로 변형이 생기게 되어 그래핀이 반도체적 성질을 띠게 되어 그래핀을 이용한 반도체 소자의 제조가 가능하게 된다. 탄소 나노 물질을 이용한 반도체 소자는 기판 상에 형성된 미리 설정된 형태를 가지는 패턴층, 패턴층상에 형성된 절연막층, 및 절연막층상에 형성된 미리 설정된 탄소 나노 물질층을 포함한다. 게이트 시그널(Gate signal)을 가하는 게이트 패턴(gate pattern)만을 미리 설정된 형태로 제작함으로써, 탄소 나노 물질이 반도체 성질을 띠게 할 수 있으므로 탄소 나노 물질을 이용하여 우수한 특성의 반도체 소자의 제조가 가능하게 된다. 전자 또는 광전자 소자인 반도체 소자는 기판, 기판상의 미리 설정된 위치에 형성된 미리 설정된 형태의 패턴 영역, 및 패턴 영역 상에 형성된 그래핀층을 포함한다. 이와 같이, 그래핀층을 미리 형성된 패턴 영역상에 형성함으로써 그래핀의 구조가 물리적으로 변형이 생기게 되어 그래핀이 반도체적 성질을 띠게 되어 그래핀을 이용한 반도체 소자의 제조가 가능하게 된다. 특히, 패턴 영역은 서로 다른 주기의 반복 형태의 패턴들을 포함하며, 큰 주기를 가지는 반복 형태의 패턴이 작은 주기를 가지는 반복 형태의 패턴 사이에 위치할 수 있다. 이와 같은 구성에 의하면, 그래핀을 이용해 양자 우물 구조를 가지는 광전자 소자를 제조할 수 있게 된다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)