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1. (WO2012102280) SOLAR CELL WAFER AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/102280    International Application No.:    PCT/JP2012/051482
Publication Date: 02.08.2012 International Filing Date: 18.01.2012
IPC:
H01L 31/04 (2006.01)
Applicants: SUMCO CORPORATION [JP/JP]; 2-1, Shibaura 1-chome, Minato-ku, Tokyo 1058634 (JP) (For All Designated States Except US).
OKUUCHI, Shigeru [JP/JP]; (JP) (For US Only)
Inventors: OKUUCHI, Shigeru; (JP)
Agent: SUGIMURA, Kenji; 36F, Kasumigaseki Common Gate West, 3-2-1, Kasumigaseki, Chiyoda-ku, Tokyo 1000013 (JP)
Priority Data:
2011-014496 26.01.2011 JP
2011-123295 01.06.2011 JP
Title (EN) SOLAR CELL WAFER AND METHOD FOR MANUFACTURING SAME
(FR) PLAQUETTE DE CELLULE SOLAIRE ET SON PROCÉDÉ DE FABRICATION
(JA) 太陽電池用ウェーハおよびその製造方法
Abstract: front page image
(EN)Provided is a solar cell wafer in which the surface of a silicon wafer or other semiconductor wafer has a porous layer, and in which the reflective loss of light on the surface can be further reduced. This solar cell wafer (100) is characterized in that at least one surface (10A) of a semiconductor wafer (10) has a porous layer (11) having a hole diameter of 10 nm to 45 nm, inclusive, and a layer thickness that ranges from greater than 50 nm to 450 nm or less.
(FR)La présente invention concerne une plaquette de cellule solaire dans laquelle la surface d'une plaquette de silicium, ou autre plaquette à semi-conducteurs, présente une couche poreuse et dans laquelle la perte de réflexion de lumière sur la surface peut encore être réduite. Cette plaquette de pile solaire (100) est caractérisée en ce qu'au moins une surface (10A) d'une plaquette à semi-conducteurs (10) présente une couche poreuse (11) ayant un diamètre de trou de 10 nm à 45 nm inclus, ainsi qu'une épaisseur de couche allant de plus de 50 nm à 450 nm maximum.
(JA) シリコンウェーハをはじめとする半導体ウェーハの表面に多孔質層を有し、該表面における光の反射ロスをより低減することが可能な太陽電池用ウェーハを提供する。 本発明の太陽電池用ウェーハ100は、半導体ウェーハ10の少なくとも片面10Aに、孔径が10nm以上45nm以下であり、層厚みが50nm超え450nm以下の多孔質層11を有することを特徴とする。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)