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1. (WO2012102237) METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/102237    International Application No.:    PCT/JP2012/051348
Publication Date: 02.08.2012 International Filing Date: 23.01.2012
IPC:
H01L 29/78 (2006.01), H01L 21/31 (2006.01), H01L 21/316 (2006.01), H01L 21/336 (2006.01), H01L 21/338 (2006.01), H01L 29/778 (2006.01), H01L 29/786 (2006.01), H01L 29/812 (2006.01)
Applicants: TOHOKU UNIVERSITY [JP/JP]; 2-1-1, Katahira, Aoba-ku, Sendai-shi, Miyagi 9808577 (JP) (For All Designated States Except US).
Advanced Power Device Research Association [JP/JP]; 2-4-3, Okano, Nishi-ku, Yokohama-shi, Kanagawa 2200073 (JP) (For All Designated States Except US).
TOKYO ELECTRON LIMITED [JP/JP]; 3-1, Akasaka 5-chome, Minato-ku, Tokyo 1076325 (JP) (For All Designated States Except US).
TERAMOTO, Akinobu [JP/JP]; (JP) (For US Only).
KAMBAYASHI, Hiroshi [JP/JP]; (JP) (For US Only).
UEDA, Hirokazu [JP/JP]; (JP) (For US Only).
MOROZUMI, Yuichiro [JP/JP]; (JP) (For US Only).
HARADA, Katsushige [JP/JP]; (JP) (For US Only).
HASEBE Kazuhide [JP/JP]; (JP) (For US Only).
OHMI, Tadahiro [JP/JP]; (JP) (For US Only)
Inventors: TERAMOTO, Akinobu; (JP).
KAMBAYASHI, Hiroshi; (JP).
UEDA, Hirokazu; (JP).
MOROZUMI, Yuichiro; (JP).
HARADA, Katsushige; (JP).
HASEBE Kazuhide; (JP).
OHMI, Tadahiro; (JP)
Agent: ITOH, Hidehiko; IMY INTERNATIONAL PATENT OFFICE, Oriental Sakaisuji Bldg., 21-19, Shimanouchi 1-chome, Chuo-ku, Osaka-shi, Osaka 5420082 (JP)
Priority Data:
2011-013066 25.01.2011 JP
Title (EN) METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEURS ET SON PROCÉDÉ DE PRODUCTION
(JA) 半導体装置の製造方法、および半導体装置
Abstract: front page image
(EN)This method for producing a semiconductor device having GaN (gallium nitride) configuring a semiconductor layer is provided with a gate insulating film formation step (F) for, using microwave plasma, forming on a nitride layer having GaN at least one film from among the group consisting of an SiO2 film and an Al2O3 film, and causing the formed film to be at least a portion of a gate insulating film.
(FR)La présente invention concerne un procédé de production d'un dispositif à semi-conducteurs qui présente du GaN (nitrure de gallium) constituant une couche à semi-conducteurs, et passant par une étape de formation de film d'isolation de grille (F) afin, à l'aide de plasma à micro-ondes, de former sur une couche de nitrure ayant du GaN au moins un film parmi le groupe composé d'un film de SiO2 et d'un film d'Al2O3, et amener le film formé à devenir au moins une partie d'un film d'isolation de grille.
(JA) 半導体装置の製造方法は、半導体層を構成するGaN(窒化ガリウム)を有する半導体装置の製造方法であって、GaNを有する窒化物の層の上に、マイクロ波プラズマを用いて、SiO膜およびAl膜からなる群のうちの少なくとも一つの膜を形成し、形成した膜をゲート絶縁膜の少なくとも一部とするゲート絶縁膜形成工程(F)を備える。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)