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1. (WO2012100519) GE-ON-INSULATOR STRUCTURE AND METHOD FOR FORMING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/100519    International Application No.:    PCT/CN2011/077703
Publication Date: 02.08.2012 International Filing Date: 27.07.2011
IPC:
H01L 21/84 (2006.01), H01L 27/12 (2006.01)
Applicants: TSINGHUA UNIVERSITY [CN/CN]; Qinghuayuan Haidian District Beijing 100084 (CN) (For All Designated States Except US).
WANG, Jing [CN/CN]; (CN) (For US Only).
XU, Jun [CN/CN]; (CN) (For US Only).
GUO, Lei [CN/CN]; (CN) (For US Only)
Inventors: WANG, Jing; (CN).
XU, Jun; (CN).
GUO, Lei; (CN)
Agent: TSINGYIHUA INTELLECTUAL PROPERTY LLC; Room 301, Trade Building Zhaolanyuan, Tsinghua University Qinghuayuan, Haidian District Beijing 100084 (CN)
Priority Data:
201110025618.X 24.01.2011 CN
Title (EN) GE-ON-INSULATOR STRUCTURE AND METHOD FOR FORMING THE SAME
(FR) STRUCTURE DE GE SUR ISOLANT, ET PROCÉDÉ DE FORMATION ASSOCIÉ
Abstract: front page image
(EN)A method for forming a Ge-on-insulator structure is provided, comprising steps of: forming a Ge layer (1200) on a substrate (2000); treating a first surface of the Ge layer (1200) to form a first semiconducting metal-germanide passivation layer (1300); bonding the first semiconducting metal-germanide passivation layer (1300) with a silicon substrate (1100), wherein on a surface of the silicon substrate (1100) an oxide insulating layer is formed; and removing the substrate (2000). Further, a Ge-on-insulator structure formed by the method is also provided.
(FR)La présente invention concerne un procédé de formation d'une structure de Ge sur isolant, comprenant les étapes suivantes : formation d'une couche de Ge (1200) sur un substrat (2000); traitement d'une première surface de la couche de Ge (1200) afin de former une première couche de passivation de germaniure métallique semi-conductrice (1300); collage de la première couche de passivation de germaniure métallique semi-conductrice (1300) avec un substrat de silicium (1100), une couche d'oxyde isolante étant formée sur une surface du substrat de silicium (1100); et retrait du substrat (2000). L'invention concerne également une structure de Ge sur isolant formée à l'aide de ce procédé.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)