WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2012099180) TARGET MATERIAL CONVERSION METHOD, CRYSTAL MANUFACTURING METHOD, COMPOSITION MANUFACTURING METHOD, AND TARGET MATERIAL CONVERSION DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/099180    International Application No.:    PCT/JP2012/051002
Publication Date: 26.07.2012 International Filing Date: 18.01.2012
Chapter 2 Demand Filed:    18.10.2012    
IPC:
B01J 19/12 (2006.01), B01J 19/00 (2006.01), B01J 19/10 (2006.01), C30B 29/58 (2006.01)
Applicants: OSAKA UNIVERSITY [JP/JP]; 1-1, Yamadaoka, Suita-shi, Osaka 5650871 (JP) (For All Designated States Except US).
MORI Yusuke [JP/JP]; (JP) (For US Only).
INOUE Tsuyoshi [JP/JP]; (JP) (For US Only).
TAKANO Kazufumi [JP/JP]; (JP) (For US Only).
MATSUMURA Hiroyoshi [JP/JP]; (JP) (For US Only).
ADACHI Hiroaki [JP/JP]; (JP) (For US Only).
SUGIYAMA Shigeru [JP/JP]; (JP) (For US Only).
MURAI Ryota [JP/JP]; (JP) (For US Only).
KURATA Masateru [JP/JP]; (JP) (For US Only).
YOSHIKAWA Hiroshi [JP/JP]; (JP) (For US Only).
HIRAO Mihoko [JP/JP]; (JP) (For US Only).
NAKAYAMA Satoshi [JP/JP]; (JP) (For US Only).
TAKAHASHI Yoshinori [JP/JP]; (JP) (For US Only).
MURAKAMI Satoshi [JP/JP]; (JP) (For US Only)
Inventors: MORI Yusuke; (JP).
INOUE Tsuyoshi; (JP).
TAKANO Kazufumi; (JP).
MATSUMURA Hiroyoshi; (JP).
ADACHI Hiroaki; (JP).
SUGIYAMA Shigeru; (JP).
MURAI Ryota; (JP).
KURATA Masateru; (JP).
YOSHIKAWA Hiroshi; (JP).
HIRAO Mihoko; (JP).
NAKAYAMA Satoshi; (JP).
TAKAHASHI Yoshinori; (JP).
MURAKAMI Satoshi; (JP)
Agent: TSUJIMARU Koichiro; 301, Bldg. 1, Kyoto Research Park, 134, Chudoji Minami-machi, Shimogyo-ku, Kyoto-shi, Kyoto 6008813 (JP)
Priority Data:
2011-008320 18.01.2011 JP
Title (EN) TARGET MATERIAL CONVERSION METHOD, CRYSTAL MANUFACTURING METHOD, COMPOSITION MANUFACTURING METHOD, AND TARGET MATERIAL CONVERSION DEVICE
(FR) PROCÉDÉ DE CONVERSION DE SUBSTANCE CIBLE, PROCÉDÉ DE FABRICATION DE CRISTAUX, PROCÉDÉ DE FABRICATION DE COMPOSITION ET DISPOSITIF DE CONVERSION DE SUBSTANCE CIBLE
(JA) 目的物質移行方法、結晶製造方法、組成物製造方法、目的物質移行装置
Abstract: front page image
(EN)Provided are a target material conversion device, a composition manufacturing method, a crystal manufacturing method and a target material conversion method capable of easily and effectively increasing the concentration of a target material. This method, which converts a target material (103) in a first phase (101), formed from a solid phase or a liquid phase containing the target material (103), to a second phase (102), is characterised by comprising: an approximation step for bringing the first phase (101) and the second phase (102) close together; and a bubble disintegration step for generating bubbles in the vicinity of the boundary between the first phase (101) and the second phase (102) and causing the bubbles to disintegrate.
(FR)L'invention porte sur un dispositif de conversion de substance cible, sur un procédé de fabrication de composition, sur un procédé de fabrication de cristaux et sur un procédé de conversion de substance cible permettant d'augmenter facilement et efficacement la concentration d'une substance cible. Ce procédé, qui convertit une substance cible (103) qui est dans une première phase (101), formée à partir d'une phase solide ou d'une phase liquide contenant la substance cible (103), en une seconde phase (102), est caractérisé en ce qu'il comporte les étapes suivantes : le rapprochement de la première phase (101) et de la seconde phase (102) l'une de l'autre ; la désintégration de bulles afin de produire des bulles au voisinage de la limite entre la première phase (101) et la seconde phase (102) et d'amener les bulles à se désintégrer.
(JA) 簡便かつ効果的に目的物質の高濃度化ができる目的物質移行方法、結晶製造方法、組成物製造方法、目的物質移行装置を提供する。 目的物質103を含む液相または固相から形成された第1の相101中の目的物質103を、第2の相102中に移行させる方法であって、 第1の相101と第2の相102とを近接させる相近接工程と、 第1の相101と第2の相102との境界の近傍に気泡を発生させて崩壊させる気泡崩壊工程とを含むことを特徴とする方法。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)