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1. (WO2012098927) VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD, ORGANIC EL ELEMENT, AND ORGANIC EL DISPLAY APPARATUS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2012/098927 International Application No.: PCT/JP2012/050031
Publication Date: 26.07.2012 International Filing Date: 04.01.2012
IPC:
C23C 14/04 (2006.01) ,C23C 14/24 (2006.01) ,H01L 51/50 (2006.01) ,H05B 33/10 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
04
Coating on selected surface areas, e.g. using masks
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
24
Vacuum evaporation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
10
Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Applicants: KAWATO Shinichi; null (UsOnly)
INOUE Satoshi; null (UsOnly)
SONODA Tohru; null (UsOnly)
SHARP KABUSHIKI KAISHA[JP/JP]; 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka 5458522, JP (AllExceptUS)
Inventors: KAWATO Shinichi; null
INOUE Satoshi; null
SONODA Tohru; null
Agent: IKEUCHI SATO & PARTNER PATENT ATTORNEYS; 26th Floor, OAP TOWER, 8-30, Tenmabashi 1-chome, Kita-ku, Osaka-shi, Osaka 5306026, JP
Priority Data:
2011-00787018.01.2011JP
Title (EN) VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD, ORGANIC EL ELEMENT, AND ORGANIC EL DISPLAY APPARATUS
(FR) APPAREIL DE DÉPÔT PAR ÉVAPORATION SOUS VIDE, PROCÉDÉ DE DÉPÔT PAR ÉVAPORATION SOUS VIDE, ÉLÉMENT ÉLECTROLUMINESCENT ORGANIQUE ET APPAREIL D'AFFICHAGE ÉLECTROLUMINESCENT ORGANIQUE
(JA) 蒸着装置、蒸着方法、有機EL素子、及び有機EL表示装置
Abstract:
(EN) First and second vapor deposition particles (91a, 91b) discharged from first and second vapor deposition source openings (61a, 61b) pass through first and second limiting openings (82a, 82b) in a limiting plate unit (80), then, pass through mask openings (71) in a vapor deposition mask (70), and form a film by being deposited on a substrate (10). When regions where the first vapor deposition particles and the second vapor deposition particles are to be deposited, said regions being on the substrate, are set as a first region (92a) and a second region (92b), in the case where it is assumed that there is no vapor deposition mask, the limiting plate unit limits first direction (10a) directivity of the first vapor deposition particles and the second vapor deposition particles traveling toward the substrate such that the second region is included in the first region. Consequently, a light emitting layer using a doping method can be formed by means of vapor deposition separately performed by color.
(FR) Selon la présente invention, des premières et secondes particules de dépôt par évaporation sous vide (91a, 91b) déchargées des première et seconde ouvertures de source de dépôt par évaporation sous vide (61a, 61b) passent à travers des première et seconde ouvertures de limitation (82a, 82b) dans une unité de plaque de limitation (80), passent ensuite à travers des ouvertures de masque (71) dans un masque de dépôt par évaporation sous vide (70) et forment un film en étant déposées sur un substrat (10). Lorsque des régions sur lesquelles doivent être déposées les premières particules de dépôt par évaporation sous vide et les secondes particules de dépôt par évaporation sous vide, lesdites régions se trouvant sur le substrat, sont déterminées être une première région (92a) et une seconde région (92b), dans le cas où on suppose qu'il n'y a pas de masque de dépôt par évaporation sous vide, l'unité de plaque de limitation limite la directivité dans une première direction (10a) des premières particules de dépôt par évaporation sous vide et des secondes particules de dépôt par évaporation sous vide qui se propagent vers le substrat de telle sorte que la seconde région soit incluse dans la première région. Par conséquent, une couche électroluminescente qui utilise un procédé de dopage peut être formée au moyen d'un dépôt par évaporation sous vide effectué séparément par couleur.
(JA)  第1及び第2蒸着源開口(61a,61b)から放出された第1及び第2蒸着粒子(91a,91b)は、制限板ユニット(80)の第1及び第2制限開口(82a,82b)を通過し、蒸着マスク(70)のマスク開口(71)を通過して基板(10)に付着して被膜を形成する。蒸着マスクがないと仮定した場合に第1蒸着粒子及び第2蒸着粒子が付着する基板上の領域をそれぞれ第1領域(92a)及び第2領域(92b)とすると、第2領域が第1領域に包含されるように、制限板ユニットは、基板へ向かう第1蒸着粒子及び第2蒸着粒子の第1方向(10a)における指向性を制限する。これにより、ドーピング法を用いた発光層を塗り分け蒸着により形成することができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)