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Machine translation
1. (WO2012098471) A HYBRID III-V SILICON LASER FORMED BY DIRECT BONDING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/098471    International Application No.:    PCT/IB2012/000518
Publication Date: 26.07.2012 International Filing Date: 17.03.2012
IPC:
H01S 5/343 (2006.01), H01S 5/20 (2006.01)
Applicants: INTEL CORPORATION (a corporation of Delaware) [US/US]; 2200 Mission College Boulevard M/S: RNB-4-150 Santa Clara, CA 95052 (US) (For All Designated States Except US).
HECK, John [US/US]; (US) (For US Only).
BAR, Hanan [IL/IL]; (IL) (For US Only).
JONES, Richard [GB/US]; (US) (For US Only).
PARK, Hyundai [KR/US]; (US) (For US Only)
Inventors: HECK, John; (US).
BAR, Hanan; (IL).
JONES, Richard; (US).
PARK, Hyundai; (US)
Agent: VINCENT, Lester, J.; Blakely, Sokoloff, Taylor & Zafman LLP 1279 Oakmead Parkway Sunnyvale, CA 94085-4040 (US)
Priority Data:
13/010,232 20.01.2011 US
Title (EN) A HYBRID III-V SILICON LASER FORMED BY DIRECT BONDING
(FR) LASER HYBRIDE III-V SUR SILICIUM FORMÉ PAR UNE LIAISON DIRECTE
Abstract: front page image
(EN)Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.
(FR)La présente invention se rapporte à un laser hybride III-V sur silicium qui comprend une première région semi-conductrice comprenant des couches de matériaux semi-conducteurs composés à partir d'un semi-conducteur du groupe III, du groupe IV ou du groupe V afin de former une région active; et une seconde région semi-conductrice qui comprend un guide d'onde en silicium et qui est reliée à la première région semi-conductrice par l'intermédiaire d'une liaison directe à température ambiante reliant une couche de la première région semi-conductrice à une couche de la seconde région semi-conductrice.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)