WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Options
Query Language
Stem
Sort by:
List Length
Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2012096909) ALIGNMENT MARKS TO ENABLE 3D INTEGRATION
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2012/096909 International Application No.: PCT/US2012/020704
Publication Date: 19.07.2012 International Filing Date: 10.01.2012
IPC:
H01L 21/027 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants: FAROOQ, Mukta, G[US/US]; US (UsOnly)
GRAVES-ABE, Troy, L.[US/US]; US (UsOnly)
HANNON, Robert[US/US]; US (UsOnly)
KINSER, Emily, R[US/US]; US (UsOnly)
LANDERS, William, F[US/US]; US (UsOnly)
PETRARCA, Kevin, S[US/US]; US (UsOnly)
VOLANT, Richard, P[US/US]; US (UsOnly)
WINSTEL, Kevin, R.[US/US]; US (UsOnly)
INTERNATIONAL BUSINESS MACHINES CORPORATION[US/US]; New Orchard Road Armonk, NY 10504, US (AllExceptUS)
Inventors: FAROOQ, Mukta, G; US
GRAVES-ABE, Troy, L.; US
HANNON, Robert; US
KINSER, Emily, R; US
LANDERS, William, F; US
PETRARCA, Kevin, S; US
VOLANT, Richard, P; US
WINSTEL, Kevin, R.; US
Agent: BROWN, Katherine, S.; International Business Machines Corporation Intellectual Property Law 482 2070 Route 52 Hopewell Junction, NY 12533, US
Priority Data:
12/987,20210.01.2011US
Title (EN) ALIGNMENT MARKS TO ENABLE 3D INTEGRATION
(FR) MARQUES D'ALIGNEMENT POUR PERMETTRE UNE INTÉGRATION EN 3D
Abstract:
(EN) A method of forming alignment marks in three dimensional (3D) structures and corresponding structures are disclosed. The method includes forming apertures (126) in a first surface of a first semiconductor substrate; joining the first surface of the first semiconductor substrate to a first surface of a second semiconductor substrate; thinning the first semiconductor on a second surface of the first semiconductor substrate to provide optical contrast between the apertures and the first semiconductor substrate (116); and aligning a feature on the second surface of the first semiconductor substrate using the apertures as at least one alignment mark.
(FR) L'invention porte sur un procédé de formation de marques d'alignement dans des structures en trois dimensions (3D) et sur des structures correspondantes. Le procédé consiste à la formation d'ouvertures (126) dans une première surface d'un premier substrat semi-conducteur ; la réunion de la première surface du premier substrat semi-conducteur à une première surface d'un second substrat semi-conducteur ; l'amincissement du premier semi-conducteur sur une seconde surface du premier substrat semi-conducteur afin de produire un contraste optique entre les ouvertures et le premier substrat semi-conducteur (116) ; et l'alignement d'un élément sur la seconde surface du premier substrat semi-conducteur à l'aide des ouvertures en tant qu'au moins une marque d'alignement.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)