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Pub. No.:    WO/2012/094842    International Application No.:    PCT/CN2011/071305
Publication Date: 19.07.2012 International Filing Date: 25.02.2011
H01L 33/38 (2010.01), H01L 33/00 (2010.01)
Applicants: CHEN, Wen-Pin [CN/CN]; (CN)
Inventors: CHEN, Wen-Pin; (CN)
Agent: BEIJING SANYOU INTELLECTUAL PROPERTY AGENCY LTD.; 16th Fl., Block A, Corporate Square No.35 Jinrong Street Beijing 100033 (CN)
Priority Data:
13/006,550 14.01.2011 US
Abstract: front page image
(EN)A light-emitting diode comprises a metal mesh pattern (210) formed on an active layer (120) without a transparent oxide conductive layer (140) formed in between. The mesh pattern (210) is formed by using ion bombardment on a metal layer so that myriad pits formed into the exposed portion of the active layer (120) served as light emitting centers.
(FR)L'invention porte sur une diode électroluminescente, qui comprend un motif de treillis métallique (210) formé sur une couche active (120) sans couche conductrice en oxyde transparent (140) formée entre ceux-ci. Le motif de treillis (210) est formé par utilisation d'un bombardement d'ions sur une couche métallique, de sorte qu'une myriade de puits formés dans la partie exposée de la couche active (120) jouent le rôle de centres d'émission de lumière.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)