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1. (WO2012094782) METHOD FOR IMPROVING UNIFORMITY OF CHEMICAL MECHANICAL PLANARIZATION PROCESS FOR METAL PLUG IN POST-GATE PROCESS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2012/094782 International Application No.: PCT/CN2011/000692
Publication Date: 19.07.2012 International Filing Date: 20.04.2011
IPC:
H01L 21/768 (2006.01) ,H01L 21/28 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
Applicants: YANG, Tao[CN/CN]; CN (UsOnly)
ZHAO, Chao[BE/BE]; BE (UsOnly)
LI, Junfeng[CN/CN]; CN (UsOnly)
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES[CN/CN]; No. 3 Beitucheng West Road Chaoyang District Beijing 100029, CN (AllExceptUS)
Inventors: YANG, Tao; CN
ZHAO, Chao; BE
LI, Junfeng; CN
Agent: CHINA PATENT AGEN (H.K.) LTD.; 22/F, Great Eagle Centre 23 Harbour Road Wanchai, Hong Kong, CN
Priority Data:
201110005058.111.01.2011CN
Title (EN) METHOD FOR IMPROVING UNIFORMITY OF CHEMICAL MECHANICAL PLANARIZATION PROCESS FOR METAL PLUG IN POST-GATE PROCESS
(FR) PROCÉDÉ D'AMÉLIORATION DE L'UNIFORMITÉ D'UN PROCESSUS DE PLANARISATION MÉCANO-CHIMIQUE D'UN BOUCHON MÉTALLIQUE DANS UN PROCESSUS POST-GRILLE
(ZH) 提高后栅工程金属插塞化学机械平坦化工艺均匀性的方法
Abstract:
(EN) A method for improving uniformity of a chemical mechanical planarization (CMP) process for a metal plug in a post-gate process is provided. The method comprises: before performing the CMP process for forming the metal plug, the height difference between a metal layer (4) in a through-hole region (3) and a metal layer (4) in a non-through-hole region is greatly reduced by a one-step metal etching process, thus the smaller height difference has a little influence on the subsequent CMP process, and during the polishing, the height difference can't be transferred to the metal plug formed subsequently, the recess in the top of the metal plug can be greatly reduced, the metal plug (6) with a planar top can be obtained, and the electrical performance and yield of the device can be improved.
(FR) L'invention concerne un procédé d'amélioration de l'uniformité d'un processus de planarisation mécano-chimique (CMP) d'un bouchon métallique dans un processus post-grille. Selon ce procédé : avant d'effectuer le processus CMP pour former le bouchon métallique, la différence de hauteur entre une couche métallique (4) dans une région de trous traversants (3) et une couche métallique (4) dans une région sans trous traversants est fortement réduite par un procédé d'attaque du métal en une étape, la différence de hauteur réduite ayant ainsi une influence moindre sur le processus de CMP ultérieur; ensuite, pendant le polissage, la différence de hauteur ne peut pas être transférée au bouchon métallique formé par la suite, le renfoncement dans le sommet du bouchon métallique peut être grandement réduit, un bouchon métallique (6) ayant un sommet plan peut être obtenu, et les performances électriques et le rendement du dispositif peuvent être améliorés.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)