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Machine translation
1. (WO2012094546) SILICON CONTROLLED RECTIFIERS (SCR), METHODS OF MANUFACTURE AND DESIGN STRUCTURES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/094546    International Application No.:    PCT/US2012/020399
Publication Date: 12.07.2012 International Filing Date: 06.01.2012
IPC:
H01L 29/66 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, NY 10504 (US) (For All Designated States Except US).
ABOU-KHALIL, Michael, J. [CA/US]; (US) (For US Only).
CHATTY, Kiran, V. [US/US]; (US) (For US Only).
GAUTHIER, Robert, J. [US/US]; (US) (For US Only).
LI, Junjun [CN/US]; (US) (For US Only)
Inventors: ABOU-KHALIL, Michael, J.; (US).
CHATTY, Kiran, V.; (US).
GAUTHIER, Robert, J.; (US).
LI, Junjun; (US)
Agent: CANALE, Anthony, J.; International Business Machines Corporation Intellectual Property Law 972e 1000 River Street Essex Junction, VT 05452 (US)
Priority Data:
12/985,840 06.01.2011 US
Title (EN) SILICON CONTROLLED RECTIFIERS (SCR), METHODS OF MANUFACTURE AND DESIGN STRUCTURES
(FR) THYRISTORS, LEURS PROCÉDÉS DE FABRICATION ET STRUCTURES DE CONCEPTION
Abstract: front page image
(EN)Silicon controlled rectifiers (SCR), methods of manufacture and design structures are disclosed herein. The method includes forming a common P-well (12) on a buried insulator layer (28b) of a silicon on insulator (SOI) wafer (28). The method further includes forming a plurality of silicon controlled rectifiers (SCR) (10) in the common P-well such that N+ diffusion cathodes (20) of each of the plurality of SCRs are coupled together by the common P-well.
(FR)La présente invention concerne des thyristors, leurs procédés de fabrication et des structures de conception. Ledit procédé comprend les étapes consistant à former un puits P classique (12) sur une couche d'isolant encastrée (28b) d'une plaquette de silicium sur isolant (SOI) (28) ; et à former une pluralité de thyristors (10) dans le puits P classique de façon à ce que les cathodes à diffusion N+ de chacun de la pluralité de thyristors soient toutes couplées par l'intermédiaire dudit puits P classique.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)