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1. (WO2012093806) THIN FILM VAPOR DEPOSITION METHOD AND THIN FILM VAPOR DEPOSITION APPARATUS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/093806    International Application No.:    PCT/KR2011/010277
Publication Date: 12.07.2012 International Filing Date: 29.12.2011
IPC:
H01L 21/205 (2006.01)
Applicants: WONIK IPS CO., LTD. [KR/KR]; 332-1, Cheongho-Ri, Jinwi-Myeon, Pyeongtaek-Si, Gyeonggi-Do 451-862 (KR) (For All Designated States Except US).
CHO, Byung-Chul [KR/KR]; (KR) (For US Only).
PARK, Ju-Hwan [KR/KR]; (KR) (For US Only).
YI, In-Hwan [KR/KR]; (KR) (For US Only)
Inventors: CHO, Byung-Chul; (KR).
PARK, Ju-Hwan; (KR).
YI, In-Hwan; (KR)
Agent: NAM, Seung-Hee; 3F, Yanghwa Tower, 736-16 Yeoksam-Dong, Gangnam-Gu Seoul 135-080 (KR)
Priority Data:
10-2011-0000479 04.01.2011 KR
10-2011-0142481 26.12.2011 KR
Title (EN) THIN FILM VAPOR DEPOSITION METHOD AND THIN FILM VAPOR DEPOSITION APPARATUS
(FR) PROCÉDÉ DE DÉPÔT DE FILM MINCE EN PHASE VAPEUR ET APPAREIL AFFÉRENT
(KO) 박막 증착 방법 및 박막 증착 장치
Abstract: front page image
(EN)Provided is a thin film vapor deposition method capable of implementing ALD or cyclic CVD without the need for operating a valve and vapor depositing a thin film with higher productivity over the conventional method. According to the present invention, the thin film vapor deposition method uses a thin film vapor deposition apparatus comprising: a substrate supporting portion having a plurality of substrate mounting portions for mounting substrates, provided inside a reactor; and a gas jetting portion comprising a source gas supplier for supplying a source gas onto the substrate supporting portion, a reaction gas supplier for supplying a reaction gas to react the source gas onto the substrate supporting portion, and a mixture gas supplier for supplying a mixture gas of the reaction gas and an inert gas onto the substrate supporting portion, provided at the upper portion of the substrate supporting portion in which the source gas supplier, the reaction gas supplier and the mixture gas supplier are radially placed, wherein the substrate supporting portion and the gas jetting portion are provided so as to be able to relatively rotate. In this case, the mixture gas supplier is placed between the source gas supplier and the reaction gas supplier. A plurality of substrates are mounted on the substrate supporting portion, and then the mixture gas, the reaction gas and the mixture gas are simultaneously supplied through the gas jetting portion while relatively rotating the substrate supporting portion and the gas jetting portion, thereby vapor depositing a thin film.
(FR)Cette invention concerne un procédé de dépôt de film mince en phase vapeur capable de mettre en œuvre un procédé ALD ou CVD cyclique sans qu'il soit besoin de manipuler une valve et de déposer un film mince en phase vapeur à une productivité plus élevée que le procédé classique. Selon la présente invention, le procédé de dépôt de film mince en phase vapeur utilise un appareil de dépôt de film mince en phase vapeur comprenant : une partie supportant des substrats pourvue d'une pluralité d'éléments de montage pour substrats pour monter des substrats, à l'intérieur d'un réacteur ; et une partie jet de gaz comprenant un dispositif d'alimentation en gaz source pour dispenser un gaz source sur la partie supportant les substrats, un dispositif d'alimentation en gaz de réaction pour dispenser un gaz de réaction et faire réagir le gaz source sur la partie supportant les substrats, et un dispositif d'alimentation en gaz mixte pour dispenser un gaz mixte constitué du gaz de réaction et d'un gaz inerte sur la partie supportant les substrats, qui se trouvent dans la partie supérieure de la partie supportant les substrats où lesdits dispositifs d'alimentation en gaz source, en gaz de réaction et en gaz mixte sont placés radialement, ladite partie supportant les substrats et ladite partie jet de gaz étant douées de rotation relative l'une par rapport à l'autre. Dans ce cas, le dispositif d'alimentation en gaz mixte est placé entre le dispositif d'alimentation en gaz source et le dispositif d'alimentation en gaz de réaction. Une pluralité de substrats est montée dans la partie supportant les substrats, puis le gaz mixte, le gaz de réaction et le gaz source sont simultanément dispensés par l'intermédiaire de la partie jet de gaz pendant la rotation relative de la partie supportant les substrats et de la partie jet de gaz, pour déposer ainsi un film mince en phase vapeur.
(KO)밸브 조작이 필요 없이 ALD 또는 싸이클릭 CVD를 구현할 수 있으면서 종래보다 높은 생산성으로 박막을 증착할 수 있는 박막 증착 방법을 제공한다. 본 발명에 따른 박막 증착 방법은 반응기 내부에 설치되고, 기판이 안착되는 복수의 기판 안착부가 마련되어 있는 기판 지지부; 및 상기 기판 지지부 상부에 설치되고, 원료가스를 상기 기판 지지부 상으로 공급하는 원료가스 공급기와, 상기 원료가스와 반응하는 반응가스를 상기 기판 지지부 상으로 공급하는 반응가스 공급기와, 상기 반응가스와 불활성 가스의 혼합가스를 상기 기판 지지부 상으로 공급하는 혼합가스 공급기를 구비하고, 상기 원료가스 공급기, 반응가스 공급기 및 혼합가스 공급기가 방사형으로 배치되는 가스 분사부;를 구비하며, 상기 기판 지지부와 가스 분사부가 상대 회전 가능하게 설치되는 박막 증착 장치를 이용하여 박막을 증착하는 방법이다. 이 경우, 상기 혼합가스 공급기는 상기 원료가스 공급기와 반응가스 공급기 사이에 오도록 배치된다. 상기 기판 안착부에 복수의 기판을 안착시킨 다음, 상기 기판 지지부와 가스 분사부를 상대 회전시키면서, 상기 가스 분사부를 통해 상기 혼합가스, 반응가스 및 혼합가스를 동시에 공급하여 박막을 증착한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)