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1. (WO2012093757) TEMPLATE, METHOD OF MANUFACTURING SAME, AND METHOD OF MANUFACTURING A VERTICAL TYPE NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/093757    International Application No.:    PCT/KR2011/004062
Publication Date: 12.07.2012 International Filing Date: 03.06.2011
IPC:
H01L 33/12 (2010.01), H01L 21/20 (2006.01), H01L 33/22 (2010.01)
Applicants: SEMIMATERIALS CO., LTD. [KR/KR]; 6Fl., Pangyo Seven Venture Valley 2-danji #1, 633 Sampyeong-dong, Bundang-gu Sengnam-si, Gyeonggi-do 463-400 (KR) (For All Designated States Except US).
OH, Chung-Seok [KR/KR]; (KR) (For US Only).
JANG, Sung-Hwan [KR/KR]; (KR) (For US Only).
JUNG, Ho-Il [KR/KR]; (KR) (For US Only).
PARK, Chi-Kwon [KR/KR]; (KR) (For US Only).
PARK, Kun [KR/KR]; (KR)
Inventors: OH, Chung-Seok; (KR).
JANG, Sung-Hwan; (KR).
JUNG, Ho-Il; (KR).
PARK, Chi-Kwon; (KR).
PARK, Kun; (KR)
Agent: DAE-A INTELLECTUAL PROPERTY CONSULTING; 3F & 4F, Hanyang Bldg. 123 Yeoksam-ro, Gangnam-gu Seoul 135-936 (KR)
Priority Data:
10-2011-0000642 04.01.2011 KR
Title (EN) TEMPLATE, METHOD OF MANUFACTURING SAME, AND METHOD OF MANUFACTURING A VERTICAL TYPE NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
(FR) MODÈLE, PROCÉDÉ DE FABRICATION DE CELUI-CI, ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF ÉLECTROLUMINESCENT SEMI-CONDUCTEUR AU NITRURE DE TYPE VERTICAL
(KO) 템플레이트, 그 제조방법 및 이를 이용한 수직형 질화물 반도체 발광소자의 제조방법
Abstract: front page image
(EN)The present invention relates to a method of manufacturing a nitride semiconductor light-emitting device using a template. A method of manufacturing the template includes: a step of growing a first nitride layer containing group III materials on a substrate; a step of forming a plurality of barriers, each having an etch characteristic different from that of the first nitride layer on the first nitride layer; a step of etching the first nitride layer along patterns of the etch barriers using chloride-based gas to form a nanostructure having a pillar shape; and a step of growing a second nitride layer on the nanostructure to form a nitride buffer layer having a plurality of pores therein.
(FR)La présente invention concerne un procédé de fabrication d'un dispositif électroluminescent semi-conducteur au nitrure utilisant un modèle. Un procédé de fabrication du modèle comprend : une étape consistant à faire croître une première couche de nitrure contenant des matériaux du groupe III sur un substrat; une étape consistant à former une pluralité de barrières, ayant chacune une caractéristique de gravure différente de celle de la première couche de nitrure sur la première couche de nitrure; une étape consistant à graver la première couche de nitrure le long de motifs des barrières de gravure au moyen d'un gaz à base de chlorure pour former une nanostructure ayant une forme de pilier; et une étape consistant à faire croître une seconde couche de nitrure sur la nanostructure pour former une couche tampon de nitrure comportant une pluralité de pores.
(KO)본 발명은 템플레이트를 이용한 질화물 반도체 발광소자의 제조방법에 관한 것으로, 본 발명에서는 기판 상에 3족 물질을 포함하는 제1 질화물층을 성장시키는 단계, 상기 제1 질화물층의 상측에, 상기 제1 질화물층과 식각 특성이 상이한 다수개의 식각 배리어를 형성하는 단계, 클로라이드 계열의 가스로 상기 제1 질화물층을 상기 식각 배리어의 패턴에 따라 식각하여 기둥 형상의 나노 구조물을 형성하는 단계 및 상기 나노 구조물 상측으로 제2 질화물층을 성장시켜, 내부에 다수개의 공극을 구비하는 질화물 완충층을 형성하는 단계를 포함하는 템플레이트 제조 방법 및 이를 이용한 질화물 반도체 발광소자의 제조방법을 제공한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)