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Pub. No.:    WO/2012/093360    International Application No.:    PCT/IB2012/050036
Publication Date: 12.07.2012 International Filing Date: 04.01.2012
H01L 29/786 (2006.01), H01L 29/66 (2006.01)
Applicants: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL) [CH/CH]; EPFL-TTO Quartier de l'innovation - J CH-1015 Lausanne (CH) (For All Designated States Except US).
KIS, Andras [HU/CH]; (CH) (For US Only).
RADISAVLJEVIC, Branimir [RS/CH]; (CH) (For US Only)
Inventors: KIS, Andras; (CH).
Agent: ROLAND, André; c/o ANDRE ROLAND S.A. P.O. Box 5107 CH-1002 Lausanne (CH)
Priority Data:
PCT/IB2011/050021 04.01.2011 IB
Abstract: front page image
(EN)Semiconductor device comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2.
(FR)L'invention concerne un dispositif à semi-conducteurs comprenant une électrode source, une électrode drain et une couche semi-conductrice constituée d'une seule couche bidimensionnelle ou de deux couches bidimensionnelles fabriquée(s) à partir des matériaux suivants : MoS2, MoSe2, WS2, WSe2, MoTe2 ou WTe2.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)