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1. (WO2012091531) LIGHT-EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/091531    International Application No.:    PCT/KR2012/000005
Publication Date: 05.07.2012 International Filing Date: 02.01.2012
IPC:
H01L 33/44 (2010.01), H01L 33/48 (2010.01), H01L 21/78 (2006.01)
Applicants: ILJIN MATERIALS CO., LTD. [KR/KR]; 718-3 Wonsi-dong, Danwon-gu, Ansan-si Gyeonggi-do 425-851 (KR) (For All Designated States Except US).
CHOI, Won-Jin [KR/KR]; (KR) (For US Only).
PARK, Jung-Won [KR/KR]; (KR) (For US Only)
Inventors: CHOI, Won-Jin; (KR).
PARK, Jung-Won; (KR)
Agent: DAE-A INTELLECTUAL PROPERTY CONSULTING; 3F & 4F, Hanyang Bldg. 123 Yeoksam-ro, Gangnam-gu Seoul 135-936 (KR)
Priority Data:
10-2010-0140163 31.12.2010 KR
10-2010-0140167 31.12.2010 KR
Title (EN) LIGHT-EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING SAME
(FR) PUCE DE DIODE ÉLECTROLUMINESCENTE ET SON PROCÉDÉ DE FABRICATION
(KO) 발광 다이오드 칩 및 그 제조 방법
Abstract: front page image
(EN)Disclosed is a light-emitting diode chip having superior light-emitting efficiency, and a method for manufacturing same. The method for manufacturing a light-emitting diode chip according to the present invention comprises the following steps: (a) forming a plurality of light-emitting diode elements on a crystalline wafer; (b) allowing the inside of a surface to be cut of the crystalline wafer, on which the plurality of light-emitting diode elements are formed, to be irradiated with a laser beam so as to form a refraction buffering layer; and (c) cutting the crystalline wafer to separate the plurality of light-emitting diode elements from each other.
(FR)L'invention porte sur une puce de diode électroluminescente, laquelle puce a un excellent rendement d'émission de lumière, et sur son procédé de fabrication. Le procédé pour fabriquer une puce de diode électroluminescente selon la présente invention comprend les étapes consistant à : (a) former une pluralité d'éléments de diode électroluminescente sur une tranche cristalline ; (b) permettre à l'intérieur d'une surface à couper de la tranche cristalline, sur laquelle la pluralité d'éléments de diode électroluminescente sont formés, d'être irradié par un faisceau laser de façon à former une couche tampon de réfraction ; et (c) couper la tranche cristalline afin de séparer la pluralité d'éléments de diode électroluminescente les uns des autres.
(KO)광 방출 효율이 우수한 발광 다이오드 칩 및 그 제조 방법에 대하여 개시한다. 본 발명에 따른 발광 다이오드 칩 제조 방법은 (a) 결정질 웨이퍼 상에 복수의 발광다이오드 소자를 형성하는 단계; (b) 상기 복수의 발광다이오드 소자가 형성된 결정질 웨이퍼의 절단 예정면 내부에 레이저를 조사하여 굴절률 완충층을 형성시키는 단계; 및 (c) 상기 결정질 웨이퍼를 절단하여, 상기 복수의 발광다이오드 소자를 서로 분리시키는 단계;를 포함하는 것을 특징으로 한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)