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1. (WO2012091330) CMP SLURRY COMPOSITION FOR SELECTIVELY POLISHING A SILICON NITRIDE LAYER, AND METHOD FOR POLISHING A SILICON NITRIDE LAYER USING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/091330    International Application No.:    PCT/KR2011/009664
Publication Date: 05.07.2012 International Filing Date: 15.12.2011
IPC:
C09K 3/14 (2006.01), H01L 21/304 (2006.01)
Applicants: CHEIL INDUSTRIES INC. [KR/KR]; 290 Gongdan-dong, Gumi-si Gyeongsangbuk-do 730-710 (KR) (For All Designated States Except US).
LIM, Geon Ja [KR/KR]; (KR) (For US Only).
CHUN, Jong Sun [KR/KR]; (KR) (For US Only).
KIM, Kee Wook [KR/KR]; (KR) (For US Only).
HONG, Chang Ki [KR/KR]; (KR) (For US Only)
Inventors: LIM, Geon Ja; (KR).
CHUN, Jong Sun; (KR).
KIM, Kee Wook; (KR).
HONG, Chang Ki; (KR)
Agent: AJU KIM CHANG & LEE; 12- 13th Floor, Saint Hiyan Building 174 Saimdang-Ro, Seocho-Gu Seoul 137-860 (KR)
Priority Data:
10-2010-0140041 31.12.2010 KR
Title (EN) CMP SLURRY COMPOSITION FOR SELECTIVELY POLISHING A SILICON NITRIDE LAYER, AND METHOD FOR POLISHING A SILICON NITRIDE LAYER USING SAME
(FR) COMPOSITION DE PÂTE POUR PMC PERMETTANT LE POLISSAGE SÉLECTIF D'UNE COUCHE DE NITRURE DE SILICIUM ET PROCÉDÉ DE POLISSAGE D'UNE COUCHE DE NITRURE DE SILICIUM L'UTILISANT
(KO) 실리콘 질화막의 선택적 연마를 위한 CMP 슬러리 조성물 및 이를 이용한 실리콘 질화막의 연마 방법
Abstract: front page image
(EN)The present invention relates to a CMP slurry composition for selectively polishing a silicon nitride layer, and to a method for polishing a silicon nitride layer using same. More particularly, the present invention relates to a CMP slurry composition for selectively polishing a silicon nitride layer, which can selectively polish a silicon nitride layer by means of comprising both a (meth)acrylate copolymer and a pyrimidine compound to increase the polishing speed of a silicon nitride layer relative to a silicon oxide layer and/or polysilicon. The invention also relates to a method for polishing a silicon nitride layer using the CMP slurry composition.
(FR)La présente invention concerne une composition de pâte pour PMC permettant le polissage sélectif d'une couche de nitrure de silicium, et un procédé de polissage d'une couche de nitrure de silicium l'utilisant. Plus précisément, l'invention concerne une composition de pâte pour PMC contenant à la fois un copolymère de (méth)acrylate et un composé de pyrimidine pour augmenter la vitesse de polissage d'une couche de nitrure de silicium par rapport à une couche d'oxyde de silicium et/ou de silicium polycristallin.
(KO)본 발명은 실리콘 질화막의 선택적 연마를 위한 CMP 슬러리 조성물 및 이를 이용한 실리콘 질화막의 연마 방법에 관한 것이다. 보다 구체적으로, 본 발명은 (메타)아크릴레이트계 공중합체와 피리딘계 화합물을 함께 포함하여, 실리콘 산화막 및/또는 폴리실리콘 대비 실리콘 질화막의 연마 속도를 높임으로써, 실리콘 질화막을 선택적으로 연마할 수 있는 CMP 슬러리 조성물 및 이를 이용한 실리콘 질화막의 연마 방법을 제공하였다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)