WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2012090946) APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/090946    International Application No.:    PCT/JP2011/080098
Publication Date: 05.07.2012 International Filing Date: 26.12.2011
IPC:
C30B 29/36 (2006.01), C30B 15/00 (2006.01)
Applicants: NIPPON STEEL & SUMITOMO METAL CORPORATION [JP/JP]; 6-1, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008071 (JP) (For All Designated States Except US).
TOYOTA JIDOSHA KABUSHIKI KAISHA [JP/JP]; 1, Toyota-cho, Toyota-shi, Aichi 4718571 (JP) (For All Designated States Except US).
OKADA, Nobuhiro [JP/JP]; (JP) (For US Only).
KAMEI, Kazuhito [JP/JP]; (JP) (For US Only).
KUSUNOKI, Kazuhiko [JP/JP]; (JP) (For US Only).
YASHIRO, Nobuyoshi [JP/JP]; (JP) (For US Only).
MORIGUCHI, Kouji [JP/JP]; (JP) (For US Only).
DAIKOKU, Hironori [JP/JP]; (JP) (For US Only).
SUZUKI, Hiroshi [JP/JP]; (JP) (For US Only).
ISHII, Tomokazu [JP/JP]; (JP) (For US Only).
SAKAMOTO, Hidemitsu [JP/JP]; (JP) (For US Only).
KADO, Motohisa [JP/JP]; (JP) (For US Only).
KAWAI, Yoichiro [JP/JP]; (JP) (For US Only)
Inventors: OKADA, Nobuhiro; (JP).
KAMEI, Kazuhito; (JP).
KUSUNOKI, Kazuhiko; (JP).
YASHIRO, Nobuyoshi; (JP).
MORIGUCHI, Kouji; (JP).
DAIKOKU, Hironori; (JP).
SUZUKI, Hiroshi; (JP).
ISHII, Tomokazu; (JP).
SAKAMOTO, Hidemitsu; (JP).
KADO, Motohisa; (JP).
KAWAI, Yoichiro; (JP)
Agent: UEBA Hidetoshi; Intelix International, Aqua Dojima West, 4-16, Dojimahama 1-chome, Kita-ku, Osaka-shi, Osaka 5300004 (JP)
Priority Data:
2010-289345 27.12.2010 JP
Title (EN) APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL
(FR) APPAREIL POUR LA PRODUCTION D'UN MONOCRISTAL DE SiC ET PROCÉDÉ DE PRODUCTION DU MONOCRISTAL DE SiC
(JA) SiC単結晶の製造装置及びSiC単結晶の製造方法
Abstract: front page image
(EN)Provided is an apparatus for producing a SiC single crystal which facilitates feeding of carbon to the vicinity of a SiC seed crystal. A control device controls an induction heating apparatus such that a frequency f of an alternating current that flows to the induction heating apparatus meets the requirements of formula (1), when the penetration depth of electromagnetic waves into a crucible sidewall by the induction heating apparatus is D1 (mm), the penetration depth of electromagnetic waves into an SiC solution is D2 (mm), the thickness of the crucible sidewall is T (mm), and the internal radius of the crucible is R (mm). (D1-T) x D2/R>1 (1) D1 is defined by formula (2), and D2 is defined by formula (3). D1=503292 x (1/(f x σc x μc))1/2 (2) D2=503292 x (1/(f x σs x μs))1/2 (3) Here, σc is the conductivity (S/m) of the sidewall and σs is the conductivity (S/m) of the SiC solution, and μc is the relative permeability (dimensionless quantity) of the sidewall and μs is the relative permeability (dimensionless quantity) of the SiC solution.
(FR)L'invention concerne un appareil pour la production d'un monocristal de SiC qui facilite l'alimentation de carbone à proximité d'un cristal germe de SiC. Un dispositif de commande commande un appareil de chauffage par induction de telle sorte qu'une fréquence f d'un courant alternatif qui s'écoule vers l'appareil de chauffage par induction satisfait aux exigences de la formule (1), quand la profondeur de pénétration des ondes électromagnétiques dans une paroi latérale du creuset par l'appareil de chauffage par induction est D1 (mm), la profondeur de pénétration des ondes électromagnétiques dans une solution de SiC solution est D2 (mm), l'épaisseur de la paroi latérale du creuset est T (mm), et le rayon interne du creuset est R (mm). (D1-T) x D2/R>1 (1) D1 est défini par la formule (2), et D2 est défini par la formule (3). D1=503292 x (1/(f x σc x μc))1/2 (2) D2=503292 x (1/(f x σs x μs))1/2 (3) Ici, σc est la conductivité (S/m) de la paroi latérale et σs est la conductivité (S/m) de la solution de SiC, et μc est la perméabilité relative (quantité sans dimension) de la paroi latérale et μs est la perméabilité relative (quantité sans dimension) de la solution de SiC.
(JA) SiC種結晶近傍に炭素を供給しやすいSiC単結晶の製造装置を提供する。誘導加熱装置による坩堝側壁への電磁波の浸透深さをD1(mm)とし、SiC溶液への電磁波の浸透深さをD2(mm)とし、坩堝側壁の厚さをT(mm)とし、坩堝の内半径をR(mm)としたとき、制御装置は、誘導加熱装置に流れる交流電流の周波数fが式(1)を満たすように誘導加熱装置を制御する。 (D1-T)×D2/R>1 (1) ここで、D1は式(2)で定義され、D2は式(3)で定義される。 D1=503292×(1/(f×σc×μc))1/2 (2) D2=503292×(1/(f×σs×μs))1/2 (3) ここで、σcは側壁の導電率(S/m)であり、σsはSiC溶液の導電率(S/m)である。μcは側壁の比透磁率(無次元量)であり、μsは、SiC溶液の比透磁率(無次元量)である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)