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1. (WO2012090938) COMPOUND SEMICONDUCTOR THIN FILM SOLAR CELL, AND PROCESS FOR PRODUCTION THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2012/090938    International Application No.:    PCT/JP2011/080080
Publication Date: 05.07.2012 International Filing Date: 26.12.2011
IPC:
H01L 31/04 (2006.01)
Applicants: TOPPAN PRINTING CO., LTD. [JP/JP]; 5-1, Taito 1-chome, Taito-ku, Tokyo 1100016 (JP) (For All Designated States Except US).
ZHANG, Yiwen [CN/JP]; (For US Only).
YAMADA, Akira [JP/JP]; (For US Only)
Inventors: ZHANG, Yiwen; .
YAMADA, Akira;
Agent: KURATA, Masatoshi; c/o SUZUYE & SUZUYE, 1-12-9, Toranomon, Minato-ku, Tokyo 1050001 (JP)
Priority Data:
2010-291278 27.12.2010 JP
Title (EN) COMPOUND SEMICONDUCTOR THIN FILM SOLAR CELL, AND PROCESS FOR PRODUCTION THEREOF
(FR) CELLULE SOLAIRE EN COUCHES MINCES À SEMI-CONDUCTEURS COMPOSÉS ET SON PROCÉDÉ DE PRODUCTION
(JA) 化合物半導体薄膜太陽電池及びその製造方法
Abstract: front page image
(EN)Disclosed is a compound semiconductor thin film solar cell which comprises a light-absorbing layer comprising a compound semiconductor and a buffer layer formed on the light-absorbing layer, and which is characterized in that the buffer layer is formed using an ink that contains nanoparticles each containing at least a metal element and a Group-16 element.
(FR)La présente invention a trait à une cellule solaire en couches minces à semi-conducteurs composés qui comprend une couche d'absorption de la lumière comprenant un semi-conducteur composé et une couche tampon qui est formée sur la couche d'absorption de la lumière, et qui est caractérisée en ce que la couche tampon est formée à l'aide d'une encre qui contient des nanoparticules contenant chacune au moins un élément de métal et un élément de Groupe 16.
(JA) 化合物半導体からなる光吸収層及びこの光吸収層上に形成されたバッファー層を具備する化合物半導体薄膜太陽電池であって、前記バッファー層を、少なくとも金属元素及び16族元素を含むナノ粒子を含むインクを用いて形成したことを特徴とする化合物半導体薄膜太陽電池が開示される。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)