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1. (WO2012088754) CHEMICAL MECHANICAL PLANARIZATION SLURRY FOR POLISHING SILICON AND COPPER
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2012/088754 International Application No.: PCT/CN2011/002132
Publication Date: 05.07.2012 International Filing Date: 19.12.2011
Chapter 2 Demand Filed: 24.09.2012
IPC:
C09G 1/02 (2006.01)
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
G
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1
Polishing compositions
02
containing abrasives or grinding agents
Applicants: XU, Chun[CN/CN]; CN (UsOnly)
ANJI MICROELECTRONICS (SHANGHAI) CO., LTD[CN/CN]; Suite 602, Building #5, No.3000 Longdong AVE. Zhangjiang Hi-tech Park Pudong, Shanghai 201203, CN (AllExceptUS)
Inventors: XU, Chun; CN
Agent: HANHONG LAW FIRM; Room 1506-07 New Huangpu Financial Building No. 61 East Nanjing Road Shanghai 200002, CN
Priority Data:
201010609130.728.12.2010CN
Title (EN) CHEMICAL MECHANICAL PLANARIZATION SLURRY FOR POLISHING SILICON AND COPPER
(FR) BOUILLIE DE PLANARISATION MÉCANO-CHIMIQUE POUR LE POLISSAGE DE SILICIUM ET DE CUIVRE
(ZH) 一种抛光硅和铜的化学机械平坦化浆料
Abstract:
(EN) Disclosed is a chemical mechanical planarization slurry for polishing silicon and copper, comprising abrasive particles, an oxidant, an alkaline polishing rate adjusting agent capable of reacting with the surface of silicon and copper to form a compound readily dissolvable in a carrier. The chemical mechanical planarization slurry disclosed can achieve a relatively high silicon and copper removal rate, regulate the polishing selection ratio of copper to silicon in chemical mechanical polishing, and control the local or overall corrosive effect of the metallic material, substantially free of surface defects, scratches, stains and other residual contaminants on the substrate.
(FR) L'invention porte sur une bouillie de planarisation mécano-chimique pour le polissage de silicium et de cuivre, comprenant des particules abrasives, un oxydant et un agent d'ajustement de la vitesse de polissage alcalin pouvant réagir avec la surface du silicium et du cuivre pour former un composé aisément soluble dans un vecteur. La bouillie de planarisation mécano-chimique selon l'invention permet de réaliser une vitesse d'élimination de silicium et de cuivre relativement élevée, d'ajuster le rapport de sélectivité de polissage du cuivre par rapport au silicium en polissage mécano-chimique et de lutter contre l'effet de corrosion locale ou globale du matériau métallique, pratiquement sans défauts de surface, rayures, taches et autres contaminants résiduels sur le substrat.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)