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1. WO2012087075 - METHOD FOR FORMING FINE PATTERN IN LARGE AREA USING LASER INTERFERENCE EXPOSURE, METHOD FOR NON-PLANAR TRANSFER OF THE FINE PATTERN FORMED BY THE METHOD, AND ARTICLE TO WHICH THE FINE PATTERN IS TRANSFERRED BY THE TRANSFER METHOD

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Publication Number WO/2012/087075
Publication Date 28.06.2012
International Application No. PCT/KR2011/010063
International Filing Date 23.12.2011
IPC
G03F 7/26 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
G03F 7/40 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
40Treatment after imagewise removal, e.g. baking
H01L 31/042 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
042PV modules or arrays of single PV cells
CPC
G03F 7/0757
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
075Silicon-containing compounds
0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
G03F 7/34
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
34Imagewise removal by selective transfer, e.g. peeling away
G03F 7/346
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
34Imagewise removal by selective transfer, e.g. peeling away
346using photosensitive materials other than non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds
H01L 31/0543
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
0543comprising light concentrating means of the refractive type, e.g. lenses
H01L 31/0547
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
0547comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
H01L 31/1892
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
1892methods involving the use of temporary, removable substrates
Applicants
  • 한국생산기술연구원 KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY [KR]/[KR] (AllExceptUS)
  • 이성호 LEE, Sung Ho [KR]/[KR] (UsOnly)
  • 김종석 KIM, Jong Seok [KR]/[KR] (UsOnly)
  • 강경태 KANG, Kyung Tae [KR]/[KR] (UsOnly)
  • 이상호 LEE, Sang Ho [KR]/[KR] (UsOnly)
Inventors
  • 이성호 LEE, Sung Ho
  • 김종석 KIM, Jong Seok
  • 강경태 KANG, Kyung Tae
  • 이상호 LEE, Sang Ho
Agents
  • 손민 SON, Min
Priority Data
10-2010-013487024.12.2010KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) METHOD FOR FORMING FINE PATTERN IN LARGE AREA USING LASER INTERFERENCE EXPOSURE, METHOD FOR NON-PLANAR TRANSFER OF THE FINE PATTERN FORMED BY THE METHOD, AND ARTICLE TO WHICH THE FINE PATTERN IS TRANSFERRED BY THE TRANSFER METHOD
(FR) PROCÉDÉ PERMETTANT DE FORMER UN FIN MOTIF DANS UNE GRANDE PARTIE À L'AIDE D'UNE EXPOSITION AUX INTERFÉRENCES D'UN LASER, PROCÉDÉ DE TRANSFERT HORS PLAN DU FIN MOTIF FORMÉ PAR LE PROCÉDÉ, ET ARTICLE AUQUEL EST TRANSFÉRÉ LE FIN MOTIF PAR LE PROCÉDÉ DE TRANSFERT
(KO) 레이저간섭 노광을 이용한 대면적 미세패턴 제작 방법, 상기 방법을 이용하여 제작된 미세패턴의 비평면적 전사 방법 및 이를 이용하여 미세 패턴을 전사한 물품
front page image
Abstract
(EN)
The present invention relates to a method for the non-planar transfer of a fine pattern and to an article to which the fine pattern is transferred by the transfer method. More particularly, the present invention relates to a method for the non-planar transfer of a fine pattern and to an article to which the fine pattern is transferred by the transfer method, wherein the method coats an upper surface of a substrate having a flat structure with a sacrificial layer and a pattern forming layer, forms a fine pattern into a large area on the coated pattern forming layer, separates the pattern forming layer on which the fine pattern is transferred, and attaches the separated pattern forming layer to an object article.
(FR)
La présente invention se rapporte à un procédé permettant le transfert hors plan d'un fin motif et à un article auquel est transféré le fin motif par le procédé de transfert. Plus particulièrement, la présente invention se rapporte à un procédé permettant le transfert hors plan d'un fin motif et à un article auquel est transféré le fin motif par le procédé de transfert. Le procédé consiste à recouvrir une surface supérieure d'un substrat qui présente une structure plate avec une couche sacrificielle et une couche formant un motif, à former un fin motif sur une grande partie de la couche recouverte formant un motif, à séparer la couche formant un motif sur laquelle est transféré le fin motif, et à fixer à un article objet la couche séparée formant un motif.
(KO)
본 발명은 미세 패턴의 비평면적 전사 방법 및 이를 이용하여 미세 패턴을 전사한 물품에 관한 것으로서, 보다 상세하게는 평면 구조의 기판 상부에 희생층 및 패턴형성층을 코팅시킨 다음 상기 코팅된 패턴형성층 상부에 미세 패턴을 대면적으로 형성시키고 상기 미세 패턴이 전사된 패턴형성층을 분리시켜 적용 대상 물품에 접착시킴으로써 미세 패턴을 비평면적으로 전사하는 방법 및 이를 이용하여 미세 패턴을 전사한 물품에 관한 것이다.
Also published as
DE112011104571
JP2014507790
KR1020120072934
Latest bibliographic data on file with the International Bureau
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