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1. WO2012082307 - HIGH INDIUM CONTENT TRANSISTOR CHANNELS

Publication Number WO/2012/082307
Publication Date 21.06.2012
International Application No. PCT/US2011/061270
International Filing Date 17.11.2011
IPC
H01L 29/778 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 21/335 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
CPC
H01L 29/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/78696
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78696characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Applicants
  • INTEL CORPORATION [US]/[US] (AllExceptUS)
  • DEWEY, Gilbert [US]/[US] (UsOnly)
  • MUKHERJEE, Niloy [IN]/[US] (UsOnly)
  • RADOSAVLJEVIC, Marko [US]/[US] (UsOnly)
  • CHU- KUNG, Benjamin [US]/[US] (UsOnly)
Inventors
  • DEWEY, Gilbert
  • MUKHERJEE, Niloy
  • RADOSAVLJEVIC, Marko
  • CHU- KUNG, Benjamin
Agents
  • WINKLE, Robert
Priority Data
12/968,90515.12.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HIGH INDIUM CONTENT TRANSISTOR CHANNELS
(FR) CANAUX DE TRANSISTOR AYANT UNE FORTE TENEUR EN INDIUM
Abstract
(EN)
The present disclosure relates to the field of microelectronic transistor fabrication and, more particularly, to the formation of high mobility transistor channels from high indium content alloys, wherein the high indium content transistor channels are achieved with a barrier layer that can substantially lattice match with the high indium content transistor channel.
(FR)
La présente invention concerne le domaine de la fabrication d'un transistor microélectronique et, plus particulièrement, la formation de canaux de transistor à mobilité élevée à partir d'alliages ayant une forte teneur en indium, les canaux de transistor à forte teneur en indium étant obtenus avec une couche barrière pouvant sensiblement s'apparier par réseau au canal de transistor à forte teneur en indium.
Also published as
Latest bibliographic data on file with the International Bureau