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1. WO2012081234 - EXPOSURE METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD

Publication Number WO/2012/081234
Publication Date 21.06.2012
International Application No. PCT/JP2011/006951
International Filing Date 13.12.2011
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
H01L 21/027 (2006.01)
G03F 7/20 (2006.01)
CPC
G03F 7/7035
G03F 7/70358
G03F 7/70708
G03F 7/70733
G03F 7/70783
H01L 21/0273
Applicants
  • 株式会社ニコン NIKON CORPORATION [JP/JP]; 東京都千代田区有楽町一丁目12番1号 12-1, Yurakucho 1-chome, Chiyoda-ku, Tokyo 1008331, JP (AllExceptUS)
  • 柴崎 祐一 SHIBAZAKI, Yuichi [JP/JP]; JP (UsOnly)
Inventors
  • 柴崎 祐一 SHIBAZAKI, Yuichi; JP
Agents
  • 立石 篤司 TATEISHI, Atsuji; 東京都多摩市唐木田一丁目53番地9 唐木田センタービル 立石国際特許事務所 TATEISHI & CO., Karakida Center Bldg., 1-53-9, Karakida, Tama-shi, Tokyo 2060035, JP
Priority Data
2010-27793714.12.2010JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) EXPOSURE METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD
(FR) PROCÉDÉ D'EXPOSITION, APPAREIL D'EXPOSITION ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF
(JA) 露光方法及び露光装置、並びにデバイス製造方法
Abstract
(EN)
An exposure apparatus (100) is provided with: an illuminating optical apparatus (10), which illuminates a mask (M) with an exposure beam (IL); a mask table (MTB), which holds the circumference of a pattern region of the mask from above such that the pattern surface of the mask is substantially parallel to the XY plane, and which makes a force within the surface parallel to at least the XY plane operate to the mask; and a wafer stage (WST), which holds a wafer (W) substantially parallel to the XY plane, and moves along the XY plane. Consequently, even though the exposure apparatus is employing a proximity system, namely, not using a projection optical system, a mask pattern and a base pattern on a substrate can be highly accurately superimposed onto each other.
(FR)
L'invention concerne un appareil d'exposition (100) comprenant : un appareil optique d'éclairement (10) qui éclaire un masque (M) à l'aide d'un faisceau d'exposition (IL) ; une table de masque (MTB) qui maintient la circonférence d'une région de motif du masque par le haut, de sorte que la surface du motif du masque soit sensiblement parallèle au plan XY, et qui applique au masque une force dans la surface parallèle au moins au plan XY ; et une platine de tranche (WST) qui maintient une tranche (W) de manière sensiblement parallèle au plan XY et qui se déplace dans le plan XY. En conséquence, même si l'appareil utilise un système de proximité, à savoir n'utilise pas un système optique de projection, un motif de masque et un motif de base sur un substrat peuvent être superposés de manière extrêmement précise.
(JA)
 露光装置(100)は、露光ビーム(IL)でマスク(M)を照明する照明光学装置(10)と、マスクのパターン面がXY平面に実質的に平行になるようにマスクのパターン領域の周囲を上方から保持するとともに、マスクに対して少なくともXY平面に平行な面内の力を作用させるマスクテーブル(MTB)と、ウエハ(W)をXY平面に実質的に平行に保持して、XY平面に沿って移動するウエハステージ(WST)と、を備えている。このため、プロキシミティ方式、すなわち投影光学系を用いない露光装置であるにもかかわらず、マスクのパターンと基板上の下地パターンとの高精度な重ね合わせを実現することが可能になる。
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