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1. WO2012078357 - MEMORY DEVICE REFRESH COMMANDS ON THE FLY

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Publication Number WO/2012/078357
Publication Date 14.06.2012
International Application No. PCT/US2011/061853
International Filing Date 22.11.2011
IPC
G11C 11/401 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
G11C 11/406 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
406Management or control of the refreshing or charge-regeneration cycles
CPC
G06F 12/023
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
12Accessing, addressing or allocating within memory systems or architectures
02Addressing or allocation; Relocation
0223User address space allocation, e.g. contiguous or non contiguous base addressing
023Free address space management
G06F 2212/1016
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
2212Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
10Providing a specific technical effect
1016Performance improvement
G11C 11/40611
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
406Management or control of the refreshing or charge-regeneration cycles
40611External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
G11C 11/40615
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
406Management or control of the refreshing or charge-regeneration cycles
40615Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
G11C 11/40618
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
406Management or control of the refreshing or charge-regeneration cycles
40618Refresh operations over multiple banks or interleaving
G11C 2211/4061
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
2211Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
401Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
406Refreshing of dynamic cells
4061Calibration or ate or cycle tuning
Applicants
  • INTEL CORPORATION [US]/[US] (AllExceptUS)
  • BAINS, Kuljit, S. [IN]/[US] (UsOnly)
Inventors
  • BAINS, Kuljit, S.
Agents
  • MALLIE, Michael, J.
Priority Data
12/977,97423.12.2010US
61/420,26906.12.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MEMORY DEVICE REFRESH COMMANDS ON THE FLY
(FR) COMMANDES D'ACTUALISATION À LA VOLÉE DE DISPOSITIFS MÉMOIRE
front page image
Abstract
(EN)
On the fly switching from one memory device refresh rate to another is provided. Control logic associated with the memory device detects a condition to switch from a currently-applied refresh rate to a different refresh rate. In response to the condition, the refresh rate is dynamically switched. The switching does not require a change of a mode register. Thus, a refresh rate for the memory device can be dynamically changed on the fly.
(FR)
L'invention concerne une commutation à la volée depuis un taux d'actualisation de dispositif mémoire vers un autre. Une logique de commande associée au dispositif mémoire détecte une condition de commutation depuis un taux d'actualisation actuellement appliqué vers un taux d'actualisation différent. En réponse à la condition, le taux d'actualisation est commuté de façon dynamique. La commutation ne requiert pas de modification de registre de mode. Un taux d'actualisation pour le dispositif mémoire peut donc être modifié de façon dynamique à la volée.
Also published as
EP2649618
KR1020130089266
KR1020150068491
KR1020160135158
US20120144106
US20140241094
US20170076780
Latest bibliographic data on file with the International Bureau
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