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1. WO2012075306 - MAKING SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL USING A FREE-STANDING INTERPOSER SHEET

Publication Number WO/2012/075306
Publication Date 07.06.2012
International Application No. PCT/US2011/062914
International Filing Date 01.12.2011
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
C30B 19/02 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
19Liquid-phase epitaxial-layer growth
02using molten solvents, e.g. flux
CPC
C04B 41/4539
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
41After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
45Coating or impregnating
4505characterised by the method of application
4535applied as a solution, emulsion, dispersion or suspension
4539as a emulsion, dispersion or suspension
C04B 41/5096
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
41After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
45Coating or impregnating
50with inorganic materials
5093with elements other than metals or carbon
5096Silicon
C30B 11/002
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
11Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
002Crucibles or containers for supporting the melt
C30B 15/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
C30B 15/007
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
007Pulling on a substrate
C30B 15/32
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
32Seed holders, e.g. chucks
Applicants
  • 1366 TECHNOLOGIES INC. [US]/[US] (AllExceptUS)
  • JONCZYK, Ralf [DE]/[US] (UsOnly)
  • SACHS, Emanuel, M. [US]/[US] (UsOnly)
Inventors
  • JONCZYK, Ralf
  • SACHS, Emanuel, M.
Agents
  • WEISSBURG, Steven, J.
Priority Data
61/418,69901.12.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MAKING SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL USING A FREE-STANDING INTERPOSER SHEET
(FR) FABRICATION DE CORPS SEMI-CONDUCTEURS À PARTIR D'UN MATÉRIAU FONDU À L'AIDE D'UNE FEUILLE D'INTERPOSITION AUTONOME
Abstract
(EN)
Interposer sheet for making silicon solar semiconductor bodies. Interposer is free-standing, thin, flexible, porous and withstands chemical/thermal environment of molten semiconductor without degradation. Interposer is of ceramic material, such as silica, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon carbonitride, silicon oxycarbonitride and others. Provided between a forming surface of a mold sheet, and the molten material from which a semiconductor body will be formed. Secured to the forming surface or deposited upon the melt. Interposer suppresses grain nucleation, and limits heat flow from the melt, promotes separation of the semiconductor body from the forming surface, prefabricated before use. Because free-standing and not adhered to the forming surface, problems of mismatch of CTE are minimized. Interposer and semiconductor body are free to expand and contract relatively independently of the forming surface.
(FR)
Cette invention concerne une feuille d'interposition qui peut être utilisée pour fabriquer des corps semi-conducteurs, en silicium par exemple, pouvant être utilisés dans des cellules solaires. Elle est autonome, très mince, souple, poreuse et capable de supporter l'environnement chimique et thermique du semi-conducteur à l'état fondu, sans dégradation. Elle est, généralement, à base d'un matériau céramique, tel que la silice, le nitrure de silicium, l'oxynitrure de silicium, l'oxycarbonitrure de silicium et autres. Elle s'insère entre une surface de formage d'une feuille à mouler, et le matériau fondu à partir duquel un corps semi-conducteur sera formé. Elle peut être fixée à la surface de formage ou déposée sur la masse fondue. La feuille d'interposition selon l'invention élimine la nucléation des grains, et limite le flux thermique provenant de la masse fondue. Elle facilite la séparation du corps semi-conducteur de la surface de formage. Elle peut être fabriquée avant utilisation. Comme elle est autonome et n'est pas collée à la surface de formage, les problèmes de différence de coefficient de dilation thermique (CTE) sont réduits. La feuille d'interposition et le corps semi-conducteur sont libres de se dilater et de se contracter relativement indépendamment de la surface de formage.
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