Processing

Please wait...

Settings

Settings

Goto Application

1. WO2012071822 - MOSFET AND MANUFACTURING METHOD FOR THE SAME

Publication Number WO/2012/071822
Publication Date 07.06.2012
International Application No. PCT/CN2011/071512
International Filing Date 04.03.2011
IPC
H01L 29/772 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
CPC
H01L 21/2652
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
26506in group IV semiconductors
26513of electrically active species
2652Through-implantation
H01L 21/2658
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
2658of a molecular ion, e.g. decaborane
H01L 29/78648
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78645with multiple gate
78648arranged on opposing sides of the channel
Applicants
  • 中国科学院微电子研究所 INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES [CN]/[CN] (AllExceptUS)
  • 朱慧珑 ZHU, Huilong [US]/[US] (UsOnly)
  • 许淼 XU, Miao [CN]/[CN] (UsOnly)
  • 梁擎擎 LIANG, Qingqing [CN]/[US] (UsOnly)
Inventors
  • 朱慧珑 ZHU, Huilong
  • 许淼 XU, Miao
  • 梁擎擎 LIANG, Qingqing
Agents
  • 中科专利商标代理有限责任公司 CHINA SCIENCE PATENT & TRADEMARK AGENT LTD.
Priority Data
201010573204.603.12.2010CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) MOSFET AND MANUFACTURING METHOD FOR THE SAME
(FR) MOSFET ET SON PROCÉDÉ DE PRODUCTION
(ZH) MOSFET及其制造方法
Abstract
(EN)
A metal-oxide-semiconductor field effect transistor (MOSFET) and a manufacturing method thereof are provided. The MOSFET comprises a silicon on insulator (SOI) wafer composed of a lower semiconductor substrate (101), a first buried oxide layer (102) and a first semiconductor layer (11); a source area and a drain area formed in a second semiconductor layer (13) on the SOI wafer, wherein a second buried oxide layer (12) separates the second semiconductor layer (13) from the SOI wafer; a channel area formed in the second semiconductor layer (13) and sandwiched between the source and the drain; a gate dielectric layer (15) and a gate conductor (16) formed on the second semiconductor layer (13); wherein, the MOSFET further comprises a back-gate (17) formed under the channel and in the first semiconductor layer (11), wherein the back-gate is doped unevenly and the second buried oxide layer (12) acts as the gate dielectric layer of the back-gate (17).
(FR)
L'invention concerne un transistor à effet de champ à semi-conducteur à oxyde métallique (MOSFET) et son procédé de production. Le MOSFET comprend une tranche de silicium-sur-isolant (SOI) composée d'un substrat semi-conducteur inférieur (101), d'une première couche d'oxyde enterrée (102) et d'une première couche semi-conductrice (11) ; une zone source et une zone drain formées dans une seconde couche semi-conductrice (13) sur la tranche SOI, une seconde d'oxyde enterrée (12) séparant la seconde couche semi-conductrice (13) de la tranche SOI ; une zone de canal formée dans la seconde couche semi-conductrice (13) et prise en sandwich entre la source et le drain ; une couche diélectrique de grille (15) et un conducteur de grille (16) formés sur la seconde couche semi-conductrice (13). Le MOSFET comprend également une grille arrière (17) formée sous le canal et dans la première couche semi-conductrice (11), ladite grille arrière étant dopée de manière inégale et la seconde couche d'oxyde enterrée (12) agissant en tant que couche diélectrique de grille de la grille arrière (17).
Also published as
Latest bibliographic data on file with the International Bureau