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1. WO2012071116 - IR PHOTODETECTORS WITH HIGH DETECTIVITY AT LOW DRIVE VOLTAGE

Publication Number WO/2012/071116
Publication Date 31.05.2012
International Application No. PCT/US2011/056180
International Filing Date 13.10.2011
IPC
H01L 31/09 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
09Devices sensitive to infra-red, visible or ultra- violet radiation
G01J 1/02 2006.01
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1Photometry, e.g. photographic exposure meter
02Details
CPC
H01L 2251/308
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2251Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
30Materials
301Inorganic materials
303Oxides, e.g. metal oxides
305Transparent conductive oxides [TCO]
308composed of indium oxides, e.g. ITO
H01L 51/426
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
4253comprising bulk hetero-junctions, e.g. interpenetrating networks
426comprising inorganic nanostructures, e.g. CdSe nanoparticles
H01L 51/4273
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
4253comprising bulk hetero-junctions, e.g. interpenetrating networks
4273comprising blocking layers, e.g. exciton blocking layers
Y02E 10/549
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
549Organic PV cells
Applicants
  • UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. [US]/[US] (AllExceptUS)
  • NANOHOLDINGS, LLC [US]/[US] (AllExceptUS)
  • SO, Franky [US]/[US] (UsOnly)
  • KIM, Do Young [KR]/[US] (UsOnly)
  • SARASQUETA, Galileo [PA]/[US] (UsOnly)
  • PRADHAN, Bhabendra, K. [IN]/[US] (UsOnly)
Inventors
  • SO, Franky
  • KIM, Do Young
  • SARASQUETA, Galileo
  • PRADHAN, Bhabendra, K.
Agents
  • BUESE, Mark, A.
Priority Data
61/416,63023.11.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) IR PHOTODETECTORS WITH HIGH DETECTIVITY AT LOW DRIVE VOLTAGE
(FR) PHOTODÉTECTEURS IR PRÉSENTANT UNE DÉTECTIVITÉ ÉLEVÉE À BASSE TENSION D'EXCITATION
Abstract
(EN)
An IR photodetector with high detectivity comprises an IR sensitizing layer situated between an electron blocking layer (EBL) and a hole blocking layer (HBL). The EBL and HBL significantly reduce the dark current, resulting in a high detectivity while allowing use of a low applied voltage to the IR photodetector.
(FR)
La présente invention concerne un photodétecteur IR présentant une détectivité élevée, comprenant une couche sensible aux IR située entre une couche de blocage des électrons (EBL) et une couche de blocage des trous (HBL). Les couches EBL et HBL réduisent sensiblement le courant d'obscurité, avec pour résultat une détectivité élevée tout en permettant l'utilisation d'une basse tension appliquée sur le photodétecteur IR.
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