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1. WO2012070217 - SPIN INJECTION ELECTRODE PRODUCTION METHOD

Publication Number WO/2012/070217
Publication Date 31.05.2012
International Application No. PCT/JP2011/006463
International Filing Date 21.11.2011
IPC
H01L 29/82 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
82controllable by variation of the magnetic field applied to the device
C01B 31/02 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
31Carbon; Compounds thereof
02Preparation of carbon; Purification
CPC
H01F 10/1936
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
08characterised by magnetic layers
10characterised by the composition
18being compounds
193Magnetic semiconductor compounds
1936Half-metallic, e.g. epitaxial CrO2 or NiMnSb films
H01F 41/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
41Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
14for applying magnetic films to substrates
20by evaporation
205by laser ablation, e.g. pulsed laser deposition [PLD]
H01F 41/30
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
41Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
14for applying magnetic films to substrates
30for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
H01L 43/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
12Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
Applicants
  • パナソニック株式会社 PANASONIC CORPORATION [JP]/[JP] (AllExceptUS)
  • 小田川 明弘 ODAGAWA, Akihiro (UsOnly)
  • 松川 望 MATSUKAWA, Nozomu (UsOnly)
Inventors
  • 小田川 明弘 ODAGAWA, Akihiro
  • 松川 望 MATSUKAWA, Nozomu
Agents
  • 鎌田 耕一 KAMADA, Koichi
Priority Data
2010-25974222.11.2010JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SPIN INJECTION ELECTRODE PRODUCTION METHOD
(FR) PROCÉDÉ DE FABRICATION D'UNE ÉLECTRODE D'INJECTION DE SPINS
(JA) スピン注入電極の製造方法
Abstract
(EN)
This production method includes: a first step for preparing multilayer graphene and ferromagnetic, Fe3O4-containing iron oxide contacting the graphene; and a second step for applying voltage or a current between the graphene and the iron oxide with the graphene side as the positive, oxidizing part of the graphene or part of the graphene and the Fe3O4, and forming a barrier layer configured from the oxidized graphene or the oxidized graphene and the Fe2O3 between the graphene and iron oxide, thereby providing graphene, iron oxide, and a barrier layer disposed at the interface of the graphene and the iron oxide, and forming a spin injection electrode capable of injecting spin from the iron oxide into the graphene via the barrier layer. This production method makes it possible to obtain a spin injection electrode capable of achieving highly efficient spin injection for graphene.
(FR)
Le procédé de fabrication ci-décrit consiste à : préparer du graphène multicouche et un oxyde de fer ferromagnétique contenant du Fe3O4 en contact avec le graphène ; et appliquer une tension ou un courant entre le graphène et l'oxyde de fer avec le côté graphène comme borne positive, oxyder une partie du graphène ou une partie du graphène et du Fe3O4, et former une couche barrière configurée à partir du graphène oxydé ou du graphène oxydé et du Fe2O3 entre le graphène et l'oxyde de fer, pour obtenir ainsi du graphène, de l'oxyde de fer et une couche barrière disposée à l'interface entre le graphène et l'oxyde de fer, qui forment une électrode d'injection de spins capable d'injecter des spins depuis l'oxyde de fer dans le graphène par l'intermédiaire de la couche barrière. Ce procédé de fabrication permet d'obtenir une électrode capable d'effectuer une injection de spin très efficace pour le graphène.
(JA)
 本発明の製造方法は、多層のグラフェンと、これに接する強磁性体であるFe34を含む鉄酸化物とを準備する第1のステップと;グラフェンと鉄酸化物との間にグラフェン側を正とする電圧または電流を印加して、グラフェンの一部、またはグラフェンおよびFe34の一部を酸化させて、酸化グラフェン、または酸化グラフェンおよびFe23により構成される障壁層をグラフェンと鉄酸化物との間に形成することにより、グラフェンと鉄酸化物とグラフェンおよび鉄酸化物の界面に配置された障壁層とを備え、鉄酸化物からグラフェンへ障壁層を介してスピンを注入しうるスピン注入電極を形成する第2のステップと;を含む。本発明の製造方法によれば、グラフェンに対する高効率のスピン注入を実現しうるスピン注入電極が得られる。
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