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1. WO2012069220 - DEVICE FOR MEASURING A CHARGE-CARRIER SERVICE LIFE IN A SEMICONDUCTOR SUBSTRATE

Publication Number WO/2012/069220
Publication Date 31.05.2012
International Application No. PCT/EP2011/064737
International Filing Date 26.08.2011
IPC
G01N 21/64 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
63optically excited
64Fluorescence; Phosphorescence
G01R 31/265 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
265Contactless testing
CPC
G01N 21/6408
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
63optically excited
64Fluorescence; Phosphorescence
6408with measurement of decay time, time resolved fluorescence
G01N 21/6489
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
63optically excited
64Fluorescence; Phosphorescence
6489Photoluminescence of semiconductors
G01R 31/2656
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
265Contactless testing
2656using non-ionising electromagnetic radiation, e.g. optical radiation
H02S 50/10
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-RED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
50Monitoring or testing of PV systems, e.g. load balancing or fault identification
10Testing of PV devices, e.g. of PV modules or single PV cells
Y02E 10/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
Applicants
  • UNIVERSITÄT KONSTANZ [DE]/[DE] (AllExceptUS)
  • HAHN, Giso [DE]/[DE] (UsOnly)
  • KILIANI, David [DE]/[DE] (UsOnly)
  • MICARD, Gabriel [DE]/[DE] (UsOnly)
  • RAABE, Bernd [DE]/[DE] (UsOnly)
Inventors
  • HAHN, Giso
  • KILIANI, David
  • MICARD, Gabriel
  • RAABE, Bernd
Agents
  • MAIWALD PATENTANWALTS GMBH
Priority Data
10 2010 052 701.726.11.2010DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VORRICHTUNG ZUM MESSEN EINER LADUNGSTRÄGERLEBENSDAUER IN EINEM HALBLEITERSUBSTRAT
(EN) DEVICE FOR MEASURING A CHARGE-CARRIER SERVICE LIFE IN A SEMICONDUCTOR SUBSTRATE
(FR) DISPOSITIF POUR LA MESURE DE LA DURÉE DE VIE D'UN PORTEUR DE CHARGE DANS UN SUBSTRAT SEMI-CONDUCTEUR
Abstract
(DE)
Es wird eine Vorrichtung zum Messen einer Ladungsträgerlebensdauer in einem Halbleitersubstrat vorgeschlagen. Die Messvorrichtung kann für ein PLI- Messverfahren (photoluminescence imaging) ausgelegt sein. Die Vorrichtung (1) weist ein Kamerasystem (9) auf. Ein Chopper (17) dient zum temporären Unterbrechen und Freigeben eines Strahlengangs (7) zwischen einem Halbleitersubstrat (3) und dem Kamerasystem (9). Zusätzlich ist zwischen der Substratposition und dem Kamerasystem (9) ein Zusatzobjektiv (25) vorgesehen, das dazu ausgestaltet ist, ein Zwischenbild des Halbleitersubstrats (3) in einer Zwischenbildebene Z zu erzeugen. Der Chopper (17) ist im Bereich der Zwischenbildebene Z des Zusatzobjektivs (25) angeordnet. Da der Strahlengang (7) dort einen minimalen Querschnitt aufweist, können Schlitze (21) in einer Chopperscheibe (19) mit einer geringen Breite ausgebildet sein, so dass eine Vielzahl schmaler Schlitze (21) in der Chopperscheibe (19) ausgebildet sein können. Alternativ kann ein Chopper mittels eines elektronisch steuerbaren Fotomultipliers implementiert werden. Aufgrund der somit möglichen erhöhten Messfrequenz kann die zeitliche Auflösung der Messvorrichtung verglichen mit herkömmlichen Vorrichtungen erhöht werden und dynamische Lebensdauermessungen im Mikrosekundenbereich ermöglichen.
(EN)
Proposed is a device for measuring a charge-carrier service life in a semiconductor substrate. The measuring device can be adapted for a PLI (photoluminescence imaging) measurement method. The device (1) has a camera system (9). A chopper (17) is used to temporarily interrupt and open up a beam path (7) between a semiconductor substrate (3) and the camera system (9). In addition, an additional objective (25) is provided between the substrate position and the camera system (9), which additional objective (25) is configured to generate an intermediate image of the semiconductor substrate (3) in an intermediate image plane Z. The chopper (17) is arranged in the region of the intermediate image plane Z of the additional objective (25). Since the beam path (7) has a minimum cross section here, slits (21) having a small width can be formed in a chopper disc (19), such that a great number of narrow slits (21) can be formed in the chopper disc (19). Alternatively, a chopper can be implemented using an electronically controllable photomultiplier. Owing to the thus possible increased measurement frequency, the temporal resolution of the measurement device can be increased in comparison with conventional devices, and dynamic service-life measurements in the microsecond range can be made possible.
(FR)
L'invention concerne un dispositif pour la mesure de la durée de vie d'un porteur de charge dans un substrat semi-conducteur. Le dispositif de mesure peut être conçu pour un procédé de mesure du type PLI (imagerie de photoluminescence). Le dispositif (1) comporte un système de prise de vue (9). Un hacheur (17) sert à interrompre et à permettre temporairement le trajet (7) d'un faisceau entre un substrat semi-conducteur (3) et le système de prise de vue (9). En outre, il est prévu entre la position du substrat et le système de prise de vue (9) un objectif supplémentaire (25) qui est configuré de sorte à former une image intermédiaire du substrat semi-conducteur (3) dans un plan intermédiaire Z. Le hacheur (17) est disposé au voisinage du plan intermédiaire Z de l'objectif supplémentaire (25). Comme le trajet (7) du faisceau présente à cet endroit une section transversale minimale, on peut former des fentes (21) de faible largeur dans un disque de hacheur (19), de sorte qu'une pluralité de fentes étroites (21) peuvent être réalisées dans le disque (19) du hacheur. En variante, on peut réaliser un hacheur au moyen d'un photomultiplicateur à commande électronique. Du fait de la fréquence de mesure plus élevée qu'on peut ainsi obtenir, la résolution temporelle du dispositif de mesure peut être augmentée par comparaison avec les dispositifs classiques, ce qui permet des mesures de durée de vie dynamiques de l'ordre de la microseconde.
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