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1. WO2012067372 - SAPPHIRE INGOT GROWER

Publication Number WO/2012/067372
Publication Date 24.05.2012
International Application No. PCT/KR2011/008507
International Filing Date 09.11.2011
IPC
C30B 29/20 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
20Aluminium oxides
C30B 9/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
9Single-crystal growth from melt solutions using molten solvents
C30B 35/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
35Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
CPC
C30B 15/14
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
14Heating of the melt or the crystallised materials
C30B 29/20
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
20Aluminium oxides
Y10T 117/1068
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
117Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
10Apparatus
1024for crystallization from liquid or supercritical state
1032Seed pulling
1068including heating or cooling details [e.g., shield configuration]
Applicants
  • LG SILTRON INC. [KR]/[KR] (AllExceptUS)
Inventors
  • LEE, Sang Hoon
  • LEE, Jae Hun
  • KIM, Soo Yul
  • OH, Hyun Jung
Agents
  • SEO, Kyo Jun
Priority Data
10-2010-011323815.11.2010KR
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SAPPHIRE INGOT GROWER
(FR) DISPOSITIF POUR FAIRE CROÎTRE UN LINGOT DE SAPHIR
Abstract
(EN)
Provided is a sapphire ingot grower. The sapphire ingot grower includes a chamber, a crucible disposed in the chamber to contain alumina melt, a heater disposed outside the crucible to heat the crucible, and a heat supply unit disposed over an ingot growing within the crucible to apply heat to the ingot.
(FR)
Dispositif pour faire croître un lingot de saphir comprenant une chambre, un creuset placé à l'intérieur de la chambre et destiné à contenir une alumine fondue, un chauffage situé à l'extérieur du creuset pour chauffer le creuset, et une unité de chauffage placée au-dessus d'un lingot en cours de croissance à l'intérieur du creuset pour appliquer de la chaleur audit lingot.
Latest bibliographic data on file with the International Bureau