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1. WO2012067060 - PRODUCTION METHOD FOR THIN FILM TRANSISTOR, AND DISPLAY DEVICE CONTAINING THIN FILM TRANSISTOR PRODUCED THEREBY

Publication Number WO/2012/067060
Publication Date 24.05.2012
International Application No. PCT/JP2011/076161
International Filing Date 14.11.2011
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 51/05 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
H01L 51/40 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
40Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
CPC
H01L 27/1292
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
1292using liquid deposition, e.g. printing
H01L 29/7869
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
7869having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
H01L 51/0512
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
0512insulated gate field effect transistors
H01L 51/0558
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
0512insulated gate field effect transistors
0558characterised by the channel of the transistor
Applicants
  • シャープ株式会社 SHARP KABUSHIKI KAISHA [JP]/[JP] (AllExceptUS)
  • 菅 勝行 SUGA, Katsuyuki (UsOnly)
Inventors
  • 菅 勝行 SUGA, Katsuyuki
Agents
  • 特許業務法人深見特許事務所 Fukami Patent Office, p.c.
Priority Data
2010-25855719.11.2010JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PRODUCTION METHOD FOR THIN FILM TRANSISTOR, AND DISPLAY DEVICE CONTAINING THIN FILM TRANSISTOR PRODUCED THEREBY
(FR) PROCÉDÉ DE FABRICATION POUR UN TRANSISTOR EN COUCHE MINCE ET DISPOSITIF D'AFFICHAGE CONTENANT UN TRANSISTOR EN COUCHE MINCE PRODUIT AINSI
(JA) 薄膜トランジスタの製造方法、および、それを用いて製造された薄膜トランジスタを含む表示装置
Abstract
(EN)
A production method for a thin film transistor includes: a step of forming, on a gate insulator (140), a bank (150, 250, 350) composed of an insulating material; a step of applying a semiconductor material in a liquid state so as to come into contact with both a source electrode (170, 370) and a drain electrode (180, 380); and a step of forming a semiconductor film (160, 360) by solidifying the semiconductor material in a liquid state. The bank (150, 250, 350) is formed to have a wall part (151, 251, 351). The wall part (151, 251, 351) defines a part of an outer edge of a semiconductor film-forming region (190, 390) on which the semiconductor film (160, 360) is formed. The semiconductor film-forming region (190, 390) contains a part of a region positioned on the gate insulator (140) and just above the gate electrode (130). The semiconductor material in a liquid state is applied so that at least a part of the section that is not in contact with the wall part (151, 251, 351) at the end of the semiconductor film (160, 360) can be a thin wall part (161, 361). The entire semiconductor material in a liquid state is solidified in order from the thin wall part (161, 361).
(FR)
L'invention porte sur un procédé de fabrication pour un transistor en couche mince, lequel procédé comprend : une étape de formation, sur un isolant de grille (140), d'un bloc (150, 250, 350) composé d'un matériau isolant ; une étape d'application d'un matériau semi-conducteur dans un état liquide de façon à venir en contact avec à la fois une électrode de source (170, 370) et une électrode de drain (180, 380) ; et une étape de formation d'un film semi-conducteur (160, 360) par solidification du matériau semi-conducteur dans un état liquide. Le bloc (150, 250, 350) est formé pour avoir une partie paroi (151, 251, 351). La partie paroi (151, 251, 351) définie une partie d'un bord externe d'une région de formation de film de semi-conducteur (190, 390) sur laquelle le film semi-conducteur (160, 360) est formé. La région de formation de film semi-conducteur (190, 390) contient une partie d'une région positionnée sur l'isolant de grille (140) et juste au-dessus de l'électrode de grille (130). Le matériau semi-conducteur dans un état liquide est appliqué de telle sorte qu'au moins une partie de la section qui n'est pas en contact avec la partie paroi (151, 251, 351) à l'extrémité du film semi-conducteur (160, 360) peut être une partie de paroi mince (161, 361). La totalité du matériau semi-conducteur dans un état liquide est solidifié dans l'ordre à partir de la partie de paroi mince (161, 361).
(JA)
 薄膜トランジスタの製造方法は、ゲート絶縁膜(140)上に絶縁性材料からなるバンク(150,250,350)を形成する工程と、ソース電極(170,370)およびドレイン電極(180,380)の両方に接するように液状の半導体材料を塗布する工程と、液状の半導体材料を固化させて半導体膜(160,360)を形成する工程とを備える。バンク(150,250,350)は、壁面部(151,251,351)を有するように形成される。壁面部(151,251,351)は、半導体膜(160,360)が形成される半導体膜形成領域(190,390)の外縁の一部を規定する。半導体膜形成領域(190,390)は、ゲート絶縁膜(140)上でゲート電極(130)の直上に位置する領域の一部を含む。半導体膜(160,360)の端部で壁面部(151,251,351)に接していない部分の少なくとも一部が薄肉部(161,361)となるように、液状の半導体材料を塗布する。薄肉部(161,361)側から順に液状の半導体材料の全体を固化させる。
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