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1. WO2012066804 - METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND LIGHT EMITTING ELEMENT

Publication Number WO/2012/066804
Publication Date 24.05.2012
International Application No. PCT/JP2011/060151
International Filing Date 26.04.2011
IPC
H01S 5/343 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
343in AIIIBV compounds, e.g. AlGaAs-laser
H01L 33/30 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
CPC
H01L 21/0237
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
H01L 21/02458
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02455Group 13/15 materials
02458Nitrides
H01L 21/0254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02538Group 13/15 materials
0254Nitrides
H01L 21/02639
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02612Formation types
02617Deposition types
02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
02639Preparation of substrate for selective deposition
H01L 21/02647
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02612Formation types
02617Deposition types
02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
02647Lateral overgrowth
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
Applicants
  • 京セラ株式会社 KYOCERA CORPORATION [JP]/[JP] (AllExceptUS)
  • 川口 義之 KAWAGUCHI, Yoshiyuki [JP]/[JP] (UsOnly)
  • 渡辺 啓一郎 WATANABE, Keiichiro [JP]/[JP] (UsOnly)
Inventors
  • 川口 義之 KAWAGUCHI, Yoshiyuki
  • 渡辺 啓一郎 WATANABE, Keiichiro
Priority Data
2010-25879319.11.2010JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND LIGHT EMITTING ELEMENT
(FR) PROCÉDÉ POUR FABRIQUER UN SUBSTRAT SEMI-CONDUCTEUR, ET ÉLÉMENT ÉMETTEUR DE LUMIÈRE
(JA) 半導体基板の製造方法、および発光素子
Abstract
(EN)
This method for manufacturing a semiconductor substrate comprises: a step wherein a first region of the surface of a substrate is covered with a mask; a step wherein a surface processing, in which fluorine is adhered to a second region of the surface of the substrate exposed from the mask, is carried out; a step wherein the mask is removed after the step wherein the surface processing is carried out; and a step wherein a semiconductor layer is grown from the first region, from which the mask has been removed, to the second region.
(FR)
L'invention porte sur un procédé pour fabriquer un substrat semi-conducteur, lequel procédé comprend : une étape dans laquelle une première région de la surface d'un substrat est recouverte d'un masque ; une étape dans laquelle un traitement de surface, dans lequel du fluor adhère à une seconde région de la surface du substrat exposée à partir du masque, est effectuée ; une étape dans laquelle le masque est retiré après l'étape dans laquelle le traitement de surface est effectué ; et une étape dans laquelle une couche semi-conductrice croît à partir de la première région, à partir de laquelle le masque a été retiré, vers la seconde région.
(JA)
 本発明の半導体基板の製造方法は、基板の表面の第1領域にマスクを被覆する工程と、前記基板の表面の前記マスクから露出した第2領域にフッ素を付着させる表面加工を行なう工程と、前記表面加工を行なう工程の後、前記マスクを除去する工程と、前記マスクが除去された前記第1領域から前記第2領域にかけて半導体層を成長させる工程とを有する。
Also published as
Latest bibliographic data on file with the International Bureau