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1. WO2012065825 - NANOSTRUCTURED SEMICONDUCTOR MATERIALS, METHOD FOR THE MANUFACTURE THEREOF AND CURRENT PULSE GENERATOR FOR CARRYING OUT SAID METHOD

Publication Number WO/2012/065825
Publication Date 24.05.2012
International Application No. PCT/EP2011/068940
International Filing Date 28.10.2011
IPC
C25D 11/32 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
11Electrolytic coating by surface reaction, i.e. forming conversion layers
02Anodisation
32of semiconducting materials
H03K 3/53 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
3Circuits for generating electric pulses; Monostable, bistable or multistable circuits
02Generators characterised by the type of circuit or by the means used for producing pulses
53by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
CPC
C25D 11/024
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING
11Electrolytic coating by surface reaction, i.e. forming conversion layers
02Anodisation
024Anodisation under pulsed or modulated current or potential
C25D 11/32
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING
11Electrolytic coating by surface reaction, i.e. forming conversion layers
02Anodisation
32of semiconducting materials
Applicants
  • EM-SILICON NANO-TECHNOLOGIES, S.L. [ES]/[ES] (AllExceptUS)
  • MATVEYEVA, Yauhenyia [BY]/[ES] (UsOnly)
  • MAKUSHOK, Yuri [BY]/[ES] (UsOnly)
  • PASTOR GALIANO, Ester, Lorena [ES]/[ES] (UsOnly)
Inventors
  • MATVEYEVA, Yauhenyia
  • MAKUSHOK, Yuri
  • PASTOR GALIANO, Ester, Lorena
Agents
  • CARPINTERO LOPEZ, Francisco
Priority Data
P20103159229.10.2010ES
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) NANOSTRUCTURED SEMICONDUCTOR MATERIALS, METHOD FOR THE MANUFACTURE THEREOF AND CURRENT PULSE GENERATOR FOR CARRYING OUT SAID METHOD
(FR) MATÉRIAUX SEMI-CONDUCTEURS NANOSTRUCTURÉS, PROCÉDÉ DE FABRICATION DE CEUX-CI ET GÉNÉRATEUR D'IMPULSIONS DE COURANT PERMETTANT DE METTRE EN ŒUVRE LEDIT PROCÉDÉ
Abstract
(EN)
The present invention relates to a method for electrochemical treatments of a semiconductor material and the electrical pulse generator for said method used in the production of three-dimensional structures integrated in a wafer of semiconductor material or free standing nanostructured particles, characterized in that it comprises at least one step for the anodic formation of one or multiple porous layers etched in a semiconductor by means of applying electric current pulses with modulation of its intensity in time, a step of lifting the layers from the substrate by ultrasounds or mechanically and, optionally, a step of mechanical grinding.
(FR)
La présente invention concerne un procédé destiné aux traitements électrochimiques d'un matériau semi-conducteur ainsi que le générateur d'impulsions électriques pour ledit procédé utilisé dans la production de structures tridimensionnelles intégrées dans une tranche de matériau semi-conducteur ou de particules nanostructurées autostables. Le procédé est caractérisé en ce qu'il comprend au moins une étape pour la formation anodique d'une ou de plusieurs couches poreuses gravées dans un semi-conducteur grâce à l'application d'impulsions de courant électrique avec une modulation de son intensité dans le temps, une étape de soulèvement des couches par rapport au substrat par ultrasons ou mécaniquement et, éventuellement, une étape de broyage mécanique.
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