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1. WO2012064395 - NON-VOLATILE MAGNETIC TUNNEL JUNCTION TRANSISTOR

Publication Number WO/2012/064395
Publication Date 18.05.2012
International Application No. PCT/US2011/048333
International Filing Date 18.08.2011
IPC
G11C 11/14 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
14using thin-film elements
CPC
G11C 11/161
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
161details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
G11C 11/1655
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1653Address circuits or decoders
1655Bit-line or column circuits
G11C 11/1659
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1659Cell access
G11C 11/1673
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1673Reading or sensing circuits or methods
G11C 11/1675
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1675Writing or programming circuits or methods
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
Applicants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US] (AllExceptUS)
  • WORLEDGE, Daniel C. [US]/[US] (UsOnly)
Inventors
  • WORLEDGE, Daniel C.
Agents
  • TUCHMAN, Ido
Priority Data
12/945,84813.11.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) NON-VOLATILE MAGNETIC TUNNEL JUNCTION TRANSISTOR
(FR) TRANSISTOR NON VOLATIL À JONCTION TUNNEL MAGNÉTIQUE
Abstract
(EN)
An example embodiment is an apparatus for controlling a magnetic direction of a magnetic free layer. The apparatus includes a writer with a first magnetic write layer and a second magnetic write layer. Applying a write voltage across first and second magnetic write layers causes a magnetic anisotropy of one of the magnetic write layers to switch from parallel to the plane of the magnetic write layers to orthogonal to the plane of the magnetic write layers. The magnetic write layer with the magnetic anisotropy parallel to the plane of the magnetic write layers induces the magnetic direction in the magnetic free layer.
(FR)
Un mode de réalisation illustratif est constitué d'un appareil de commande de l'orientation magnétique d'une couche magnétique libre. L'appareil comprend un moyen d'écriture ayant une première couche d'écriture magnétique et une seconde couche d'écriture magnétique. L'application d'une tension d'écriture entre la première et la seconde couche d'écriture magnétique commande une commutation de l'anisotropie magnétique de l'une des couches d'écriture magnétique qui, de parallèle au plan des couches d'écriture magnétique, devient orthogonale au plan des couches d'écriture magnétique. La couche d'écriture magnétique dont l'anisotropie magnétique est parallèle au plan des couches d'écriture magnétique induit l'orientation magnétique de la couche magnétique libre.
Also published as
GB1309545.0
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