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1. WO2012063743 - METHOD FOR PRODUCING n-TYPE SiC MONOCRYSTAL

Publication Number WO/2012/063743
Publication Date 18.05.2012
International Application No. PCT/JP2011/075483
International Filing Date 04.11.2011
IPC
C30B 29/36 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
C30B 19/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
19Liquid-phase epitaxial-layer growth
CPC
C30B 15/10
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
10Crucibles or containers for supporting the melt
C30B 15/20
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
20Controlling or regulating
C30B 15/30
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
30Mechanisms for rotating or moving either the melt or the crystal
C30B 15/36
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
36characterised by the seed, e.g. its crystallographic orientation
C30B 17/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
17Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
C30B 19/02
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
19Liquid-phase epitaxial-layer growth
02using molten solvents, e.g. flux
Applicants
  • 新日鐵住金株式会社 NIPPON STEEL & SUMITOMO METAL CORPORATION [JP]/[JP] (AllExceptUS)
  • トヨタ自動車株式会社 TOYOTA JIDOSHA KABUSHIKI KAISHA [JP]/[JP] (AllExceptUS)
  • 楠 一彦 KUSUNOKI, Kazuhiko [JP]/[JP] (UsOnly)
  • 亀井 一人 KAMEI, Kazuhito [JP]/[JP] (UsOnly)
  • 矢代 将斉 YASHIRO, Nobuyoshi [JP]/[JP] (UsOnly)
  • 森口 晃治 MORIGUCHI, Kouji [JP]/[JP] (UsOnly)
  • 岡田 信宏 OKADA, Nobuhiro [JP]/[JP] (UsOnly)
  • 旦野 克典 DANNO, Katsunori [JP]/[JP] (UsOnly)
  • 大黒 寛典 DAIKOKU, Hironori [JP]/[JP] (UsOnly)
Inventors
  • 楠 一彦 KUSUNOKI, Kazuhiko
  • 亀井 一人 KAMEI, Kazuhito
  • 矢代 将斉 YASHIRO, Nobuyoshi
  • 森口 晃治 MORIGUCHI, Kouji
  • 岡田 信宏 OKADA, Nobuhiro
  • 旦野 克典 DANNO, Katsunori
  • 大黒 寛典 DAIKOKU, Hironori
Agents
  • 上羽 秀敏 UEBA Hidetoshi
Priority Data
2010-25049209.11.2010JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING n-TYPE SiC MONOCRYSTAL
(FR) PROCÉDÉ DE PRODUCTION D'UN MONOCRISTAL DE CARBURE DE SILICIUM (SiC) DE TYPE n
(JA) n型SiC単結晶の製造方法
Abstract
(EN)
Provided is a method for producing an n-type SiC monocrystal, said method being able to suppress variations of the nitrogen concentration among a plurality of n-type SiC monocrystal ingots produced. This embodiment of a method for producing an n-type SiC monocrystal is provided with: a step for preparing a production device (100) provided with a chamber (1) having a region at which a crucible (7) is disposed; a step for heating the region at which the crucible (7) is disposed and evacuating the gas within the chamber (1); a step for filling the chamber (1) interior with a mixed gas containing a noble gas and nitrogen gas after evacuation; a step for melting a starting material housed in the crucible (7) disposed at the region by means of heating, generating an SiC solution (8) containing silicon and carbon; and a step for immersing an SiC seed crystal in the SiC solution in the mixed gas ambient, growing an n-type SiC monocrystal on the SiC seed crystal.
(FR)
La présente invention se rapporte à un procédé de production d'un monocristal de carbure de silicium (SiC) de type n, ledit procédé pouvant supprimer des variations de la concentration en azote parmi une pluralité de lingots de monocristal de carbure de silicium (SiC) de type n produits. Ce mode de réalisation d'un procédé de production d'un monocristal de carbure de silicium (SiC) de type n est pourvu : une étape pour préparer un dispositif de production (100) pourvu d'une chambre (1) qui présente une région au niveau de laquelle est disposé un creuset (7); une étape pour chauffer la région au niveau de laquelle est disposé un creuset (7), et évacuer le gaz se trouvant à l'intérieure de la chambre (1); une étape pour remplir l'intérieur de la chambre (1) avec un gaz mixte contenant un gaz noble et de l'azote après évacuation; une étape pour faire fondre une matière première reçue dans le creuset (7) disposé au niveau de la région par chauffage, générer une solution de carbure de silicium (SiC) (8) contenant du silicium et du carbone; et une étape pour immerger un germe cristallin de carbure de silicium (SiC) dans la solution de carbure de silicium (SiC) dans le gaz ambiant mixte, développer un monocristal de carbure de silicium (SiC) de type n sur le germe cristallin de carbure de silicium (SiC).
(JA)
 製造された複数のn型SiC単結晶インゴット間の窒素濃度のばらつきを抑えることができるn型SiC単結晶の製造方法を提供する。本実施の形態におけるn型SiC単結晶の製造方法は、坩堝(7)が配置される領域を有するチャンバ(1)を備えた製造装置(100)を準備する工程と、坩堝(7)が配置される領域を加熱し、かつ、チャンバ(1)内のガスを真空排気する工程と、真空排気した後、希ガスと窒素ガスとを含有する混合ガスをチャンバ(1)内に充填する工程と、領域に配置された坩堝(7)に収納された原料を加熱により溶融して、シリコンと炭素とを含有するSiC溶液(8)を生成する工程と、混合ガス雰囲気下において、SiC種結晶をSiC溶液に浸漬して、SiC種結晶上にn型SiC単結晶を育成する工程とを備える。
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