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1. WO2012063723 - SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Publication Number WO/2012/063723
Publication Date 18.05.2012
International Application No. PCT/JP2011/075383
International Filing Date 04.11.2011
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
G02F 1/1368 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
H01L 21/02422
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02422Non-crystalline insulating materials, e.g. glass, polymers
H01L 21/0245
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02441Group 14 semiconducting materials
0245Silicon, silicon germanium, germanium
H01L 21/02532
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02532Silicon, silicon germanium, germanium
H01L 21/0262
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02612Formation types
02617Deposition types
0262Reduction or decomposition of gaseous compounds, e.g. CVD
H01L 21/02667
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02656Special treatments
02664Aftertreatments
02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
H01L 29/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
04characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Applicants
  • シャープ株式会社 SHARP KABUSHIKI KAISHA [JP]/[JP] (AllExceptUS)
  • 水木 敏雄 MIZUKI, Toshio (UsOnly)
  • 河野 昭彦 KOHNO, Akihiko (UsOnly)
  • 田中 康一 TANAKA, Kohichi (UsOnly)
Inventors
  • 水木 敏雄 MIZUKI, Toshio
  • 河野 昭彦 KOHNO, Akihiko
  • 田中 康一 TANAKA, Kohichi
Agents
  • 島田 明宏 SHIMADA, Akihiro
Priority Data
2010-25260911.11.2010JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR, DISPOSITIF DE VISUALISATION ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置、表示装置、および半導体装置の製造方法
Abstract
(EN)
The present invention provides a semiconductor device with increased mobility that uses a microcrystal semiconductor in a channel layer and a method for manufacturing the same. A TFT (100) is provided with a channel layer in which, in order from a gate insulating film (3) side, a first microcrystal silicon film (4A) having a relatively high crystallization ratio (Rc) and a second microcrystal silicon film (4B) with a relatively low amorphous region surface area ratio (Ra) are laminated. With this laminated structure, an ON current mainly flows in domains (11A) and when the current comes near a domain boundary (12A), part of the ON current flowing on the first microcrystal silicon film (4A) side branches to the second microcrystal silicon film (4B) side. Therefore, the inhibition of the ON current flow because of the domain boundary (12A) is reduced. Thus, a microcrystal silicon TFT with increased mobility can be achieved.
(FR)
Cette invention concerne un dispositif à semi-conducteur présentant une mobilité accrue et comprenant un semi-conducteur microcristallin dans une couche de canal. L'invention concerne en outre un procédé de fabrication dudit dispositif. Un transistor à couches minces (100) comprend une couche de canal dans laquelle sont stratifiés, dans cet ordre, à partir d'un côté de film isolant de grille (3), un premier film de silicium microcristallin (4A) présentant un indice de cristallisation (Rc) relativement élevé, et un second film de silicium microcristallin (4B) présentant un rapport de section (Ra) de zone amorphe relativement réduit. Ladite structure stratifiée permet au courant à l'état passant de circuler principalement dans les domaines (11A) et quand le courant s'approche d'une limite de domaine (12A), une partie du courant à l'état passant circulant sur le côté du premier film de silicium monocristallin (4A) est dérivée vers le côté du second film de silicium monocristallin (4B). Il est ainsi possible de réduire l'inhibition du flux de courant à l'état passant due à la limite de domaine (12A). Ceci permet d'obtenir un transistor à couches minces en silicium microcristallin à mobilité accrue.
(JA)
 本発明は、移動度が高められた、微結晶半導体をチャネル層に用いた半導体装置およびその製造方法を提供する。 TFT(100)は、ゲート絶縁膜(3)側から順に、結晶化率Rcが相対的に高い第1微結晶シリコン膜(4A)とアモルファス領域面積率Raが相対的に低い第2微結晶シリコン膜(4B)とが積層されたチャネル層を備える。このような積層構造によれば、オン電流がドメイン(11A)を主に流れ、ドメイン境界(12A)に差し掛かると、第1微結晶シリコン膜(4A)側を流れるオン電流の一部が第2微結晶シリコン膜(4B)側に分流する。そのため、ドメイン境界(12A)によりオン電流の流れの阻害が軽減される。これにより、移動度が高められた微結晶シリコンTFTを実現できる。
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