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1. WO2012063636 - POSITIVE-TYPE PHOTORESIST COMPOSITION

Publication Number WO/2012/063636
Publication Date 18.05.2012
International Application No. PCT/JP2011/074492
International Filing Date 25.10.2011
IPC
G03F 7/023 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
022Quinonediazides
023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
C08G 8/20 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
8Condensation polymers of aldehydes or ketones with phenols only
04of aldehydes
08of formaldehyde, e.g. of formaldehyde formed in situ
20with polyhydric phenols
CPC
C08G 8/04
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
8Condensation polymers of aldehydes or ketones with phenols only
04of aldehydes
C08G 8/20
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
8Condensation polymers of aldehydes or ketones with phenols only
04of aldehydes
08of formaldehyde, e.g. of formaldehyde formed in situ
20with polyhydric phenols
C08L 61/12
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
61Compositions of condensation polymers of aldehydes or ketones
04Condensation polymers of aldehydes or ketones with phenols only
06of aldehydes with phenols
12with polyhydric phenols
G03F 7/004
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/0236
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
022Quinonediazides
023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
0233characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
Applicants
  • DIC株式会社 DIC Corporation [JP]/[JP] (AllExceptUS)
  • 今田 知之 IMADA Tomoyuki [JP]/[JP] (UsOnly)
  • 鹿毛 孝和 KAGE Takakazu [JP]/[JP] (UsOnly)
  • 今泉 規史 IMAIZUMI Norifumi [JP]/[JP] (UsOnly)
Inventors
  • 今田 知之 IMADA Tomoyuki
  • 鹿毛 孝和 KAGE Takakazu
  • 今泉 規史 IMAIZUMI Norifumi
Agents
  • 河野 通洋 KONO Michihiro
Priority Data
2010-25176110.11.2010JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) POSITIVE-TYPE PHOTORESIST COMPOSITION
(FR) COMPOSITION DE RÉSINE PHOTOSENSIBLE DE TYPE POSITIF
(JA) ポジ型フォトレジスト組成物
Abstract
(EN)
Provided is a positive-type photoresist composition characterized by comprising, as the essential component, a novolak-type phenol resin (C) that is obtained by condensing an aromatic compound (A) represented by general formula (1) or (2) with an aliphatic aldehyde (B). This positive-type photoresist composition can combine, at a high level, sensitivity and heat resistance, which have been difficult to combine in the past. Thus, the positive-type photoresist composition can be suitably used as a positive-type photoresist in the production of articles which necessitate the formation of finer patterns owing to the recent increase in the degree of integration, said articles including semiconductor devices such as IC and LSI, display devices such as LCD, and printing plate precursors. In the general formulae, R1, R2 and R3 are each independently C1-8 alkyl; m, n and p are each independently an integer of 0 to 4; q is an integer of 1 to (5-p); and s is an integer of 1 to (9-p).
(FR)
La présente invention se rapporte à une composition de résine photosensible de type positif qui est caractérisée par le fait qu'elle comprend, comme composant essentiel, une résine phénol de type novolaque (C) qui est obtenue par condensation d'un composé aromatique (A) représenté par la formule générale (1) ou (2) avec un aldéhyde aliphatique (B). Cette composition de résine photosensible de type positif peut combiner, à un certain point, sensibilité et résistance à la chaleur qui ont été, dans le passé, difficiles à combiner. Ainsi, la composition de résine photosensible de type positif peut être utilisée de façon appropriée comme résine photosensible de type positif dans la production d'articles qui nécessitent la formation de motifs plus fins en raison de la récente augmentation du degré d'intégration, lesdits articles comprenant des dispositifs semi-conducteurs tels qu'un circuit intégré et une intégration à grande échelle (LSI), des dispositifs d'affichage tels que des dispositifs d'affichage à cristaux liquides (LCD), et des précurseurs de plaque d'impression. Dans les formules générales, R1, R2 et R3 sont chacun indépendamment un allyle en C1-8; m, n et p sont chacun indépendamment un nombre entier compris entre 0 et 4; q est un nombre entier compris entre 1 et (5 - p); et s est un nombre entier compris entre 1 et (9 - p).
(JA)
 下記一般式(1)又は(2)で表される芳香族化合物(A)と脂肪族アルデヒド(B)とを縮合して得られるノボラック型フェノール樹脂(C)を必須成分として含有することを特徴とするポジ型フォトレジスト組成物を提供する。このポジ型フォトレジスト組成物は、これまで両立が困難であった感度及び耐熱性を高いレベルで両立し、近年の高集積化により、より細線化されたパターンの作製が要求されるIC、LSI等の半導体製造、LCD等の表示装置の製造、印刷原版の製造などに用いられるポジ型フォトレジストとして好適に用いることができる。(式中、R、R及びRはそれぞれ独立して炭素原子数1~8のアルキル基である。また、m、n及びpはそれぞれ独立して0~4の整数であり、qは1~(5-p)の整数であり、sは1~(9-p)の整数である。)
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