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1. WO2012063495 - PROCESS FOR MANUFACTURE OF NON-VOLATILE SEMICONDUCTOR STORAGE ELEMENT

Publication Number WO/2012/063495
Publication Date 18.05.2012
International Application No. PCT/JP2011/006302
International Filing Date 10.11.2011
IPC
H01L 27/105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
H01L 45/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H01L 49/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
CPC
G11C 13/0007
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0007comprising metal oxide memory material, e.g. perovskites
H01L 27/101
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
101including resistors or capacitors only
H01L 45/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
08based on migration or redistribution of ionic species, e.g. anions, vacancies
H01L 45/1233
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
12Details
122Device geometry
1233adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
H01L 45/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
14Selection of switching materials
145Oxides or nitrides
146Binary metal oxides, e.g. TaOx
H01L 45/1625
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
16Manufacturing
1608Formation of the switching material, e.g. layer deposition
1625by physical vapor deposition, e.g. sputtering
Applicants
  • パナソニック株式会社 PANASONIC CORPORATION [JP]/[JP] (AllExceptUS)
  • 三河 巧 MIKAWA, Takumi (UsOnly)
  • 早川 幸夫 HAYAKAWA, Yukio (UsOnly)
  • 二宮 健生 NINOMIYA, Takeki (UsOnly)
  • 川島 良男 KAWASHIMA, Yoshio (UsOnly)
Inventors
  • 三河 巧 MIKAWA, Takumi
  • 早川 幸夫 HAYAKAWA, Yukio
  • 二宮 健生 NINOMIYA, Takeki
  • 川島 良男 KAWASHIMA, Yoshio
Agents
  • 新居 広守 NII, Hiromori
Priority Data
2010-25431412.11.2010JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PROCESS FOR MANUFACTURE OF NON-VOLATILE SEMICONDUCTOR STORAGE ELEMENT
(FR) PROCÉDÉ DE FABRICATION D'ÉLÉMENT DE MÉMOIRE NON VOLATIL À SEMI-CONDUCTEUR
(JA) 不揮発性半導体記憶素子の製造方法
Abstract
(EN)
The purpose of the present invention is to provide a process for manufacturing a resistance-variable non-volatile semiconductor storage element which has a reduced initial braking voltage, can be operated at a high velocity, and does not oxidize a contact plug. Provided is a process for manufacturing a non-volatile semiconductor storage element which involves a resistance-variable element comprising a lower electrode (105), a resistance-variable layer (106) and an upper electrode (107) all formed on a contact plug (104), wherein the process involves a step of oxidizing an end part of the resistance-variable layer (106) for the purpose of insulating the end part and the step is carried out prior to the patterning of a first electrically conductive film (105') to form the lower electrode (105).
(FR)
Cette invention concerne un procédé de fabrication d'un élément de mémoire non volatil à semi-conducteur à résistance variable présentant une tension de claquage initiale réduite, qui peut fonctionner à grande vitesse et qui n'oxyde pas une fiche de contact. Plus spécifiquement, l'invention concerne un procédé de fabrication d'un élément de mémoire non volatil mettant en œuvre un élément de résistance variable comprenant une électrode inférieure (105), une couche de résistance variable (106) et une électrode supérieure (107), toutes trois formées sur une fiche de contact (104). Ledit procédé comprend l'étape consistant à oxyder une partie d'extrémité de la couche de résistance variable (106) dans le but d'isoler ladite partie d'extrémité. Cette étape est exécutée avant la formation d'un motif sur un premier film conducteur (105') dans le but de former l'électrode inférieure (105).
(JA)
 本発明は、初期ブレイク時の低電圧、及び高速動作が可能で、コンタクトプラグの酸化を抑えることが可能な抵抗変化型不揮発性半導体記憶素子の製造方法を提供することを目的とするものであって、コンタクトプラグ(104)上に形成された下部電極(105)、抵抗変化層(106)、上部電極(107)から構成される抵抗変化素子を含む不揮発性半導体記憶素子の製造方法において、第1の導電膜(105')をパターニングして下部電極(105)を形成する前に、抵抗変化層(106)の端部を絶縁化させるために酸化する工程を有する。
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