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1. WO2012062501 - METROLOGY METHOD AND APPARATUS, AND DEVICE MANUFACTURING METHOD

Publication Number WO/2012/062501
Publication Date 18.05.2012
International Application No. PCT/EP2011/066038
International Filing Date 15.09.2011
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
G03F 7/00
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G03F 7/70483
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
G03F 7/70633
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70633Overlay
G03F 9/00
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
Applicants
  • ASML NETHERLANDS B.V. [NL]/[NL] (AllExceptUS)
  • SMILDE, Hendrik [NL]/[NL] (UsOnly)
  • WARNAAR, Patrick [NL]/[NL] (UsOnly)
Inventors
  • SMILDE, Hendrik
  • WARNAAR, Patrick
Agents
  • VAN DE VEN, Jan-Piet
Priority Data
61/412,98012.11.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METROLOGY METHOD AND APPARATUS, AND DEVICE MANUFACTURING METHOD
(FR) PROCÉDÉ ET APPAREIL DE MÉTROLOGIE ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF
Abstract
(EN)
Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application. A second type of correction may be applied to reduce the influence of asymmetry between the first and second modes of illumination or imaging, for example to permit a more accurate overly measurement in a semiconductor device manufacturing process.
(FR)
La présente invention se rapporte à des procédés permettant de mesurer des structures cibles formées sur un substrat par un procédé lithographique. Une structure de réseau ou une autre structure à l'intérieur de la cible est plus petite qu'un point d'éclairage et que le champ de vision d'un système optique de mesure. La position d'une image de la structure composante varie entre des mesures, et un premier type de correction est appliqué afin de réduire les effets sur les intensités mesurées provoqués par les différences dans le trajet optique par rapport aux différentes positions et à partir des différentes positions. Une pluralité de structures peuvent être imagées en même temps dans le champ de vision du système optique et chaque structure peut être corrigée en fonction de sa position respective. Les mesures peuvent comprendre des première et seconde images de la même cible selon différents modes d'éclairage et/ou d'imagerie, par exemple dans une application de métrologie sur fond noir. Un second type de correction peut être appliqué afin de réduire les effets d'une asymétrie entre les premier et second modes d'éclairage ou d'imagerie, par exemple pour permettre une mesure plus précise du recouvrement dans un procédé de fabrication de dispositif semi-conducteur.
Also published as
Latest bibliographic data on file with the International Bureau