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1. WO2012061436 - DRY ETCHING METHOD OF SURFACE TEXTURE FORMATION ON SILICON WAFER

Publication Number WO/2012/061436
Publication Date 10.05.2012
International Application No. PCT/US2011/058846
International Filing Date 01.11.2011
IPC
B65G 49/07 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
49Conveying systems characterised by their application for specified purposes not otherwise provided for
05for fragile or damageable materials or articles
07for semiconductor wafers
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 31/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 31/02363
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0236Special surface textures
02363of the semiconductor body itself, e.g. textured active layers
Applicants
  • INTEVAC, INC. [US]/[US] (AllExceptUS)
  • CHO, Young, Kyu [KR]/[US] (UsOnly)
Inventors
  • CHO, Young, Kyu
Agents
  • HAYES, Jennifer
Priority Data
61/409,06401.11.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) DRY ETCHING METHOD OF SURFACE TEXTURE FORMATION ON SILICON WAFER
(FR) PROCÉDÉ DE GRAVURE À SEC POUR FORMER UNE TEXTURE DE SURFACE SUR TRANCHE DE SILICIUM
Abstract
(EN)
Systems and methods for improving surface reflectance of silicon wafers are disclosed. The systems and methods improve surface reflectance by forming a textured surface on the silicon wafer by performing surface oxidation and dry etching processes. The surface oxidation maybe performed using a dry oxygen plasma process. A dry etch process is performed to remove the oxide layer formed by the surface oxidation step and etch the Silicon layer with oxide masking. Dry etching enables black silicon formation, which minimizes or eliminates light reflection or scattering, eventually leading to higher energy conversion efficiency.
(FR)
L'invention porte sur des systèmes et des procédés qui permettent d'améliorer le facteur de réflexion de surface de tranches de silicium. Les systèmes et les procédés améliorent le facteur de réflexion de surface par la formation d'une surface texturée sur la tranche de silicium en exécutant des procédés d'oxydation de surface et de gravure à sec. L'oxydation de surface peut être effectuée à l'aide d'un procédé à plasma d'oxygène à sec. Le procédé de gravure à sec est effectué pour éliminer la couche d'oxyde formée par l'étape d'oxydation de surface et pour graver la couche de silicium en utilisant un masquage d'oxyde. La gravure à sec permet de former du silicium noir, ce qui réduit à un minimum ou élimine la réflexion ou la diffusion de lumière, conduisant finalement à un rendement énergétique de conversion plus élevé.
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