Processing

Please wait...

Settings

Settings

Goto Application

1. WO2012061205 - ELECTROMECHANICAL SYSTEMS APPARATUSES AND METHODS FOR PROVIDING ROUGH SURFACES

Publication Number WO/2012/061205
Publication Date 10.05.2012
International Application No. PCT/US2011/058145
International Filing Date 27.10.2011
IPC
H01H 59/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
59Electrostatic relays; Electro-adhesion relays
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
B81B 3/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
3Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
CPC
B81B 2201/042
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2201Specific applications of microelectromechanical systems
04Optical MEMS
042Micromirrors, not used as optical switches
B81B 3/001
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
3Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
0002Arrangements for avoiding sticking of the flexible or moving parts
001Structures having a reduced contact area, e.g. with bumps or with a textured surface
G02B 26/001
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
26Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating
001based on interference in an adjustable optical cavity
Applicants
  • QUALCOMM MEMS TECHNOLOGIES, INC. [US]/[US] (AllExceptUS)
  • SASAGAWA, Teruo [JP]/[US] (UsOnly)
  • FENNELL, Leonard, Eugene [US]/[US] (UsOnly)
Inventors
  • SASAGAWA, Teruo
  • FENNELL, Leonard, Eugene
Agents
  • ABUMERI, Mark, M.
Priority Data
12/917,75902.11.2010US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ELECTROMECHANICAL SYSTEMS APPARATUSES AND METHODS FOR PROVIDING ROUGH SURFACES
(FR) SYSTÈMES, APPAREILS ET PROCÉDÉS ÉLECTROMÉCANIQUES POUR PRODUIRE DES SURFACES RUGUEUSES
Abstract
(EN)
This disclosure provides systems, methods, and apparatus for producing roughness in an electromechanical device by nucleation under plasma CVD conditions. In one aspect, a substrate and at least a first layer are provided. The disclosure further provides gas phase nucleating particles under plasma CVD conditions and depositing a first layer, where the particles are incorporated into the first layer to create roughness in the first layer. The roughness may be transferred to a second layer by conformal deposition of the second layer over the first layer. The roughness of the second layer corresponds to the roughness of the first layer, where the first layer has a roughness greater than or equal to about 20 Å root mean square (RMS).
(FR)
La présente invention concerne des systèmes, des procédés et des appareils destinés à produire une rugosité dans un dispositif électromécanique par nucléation sous conditions de CVD à plasma. Dans un des aspects, un substrat et au moins une première couche sont mis en place. L'invention concerne en outre la nucléation en phase gazeuse de particules sous conditions de CVD à plasma et le dépôt d'une première couche, les particules étant incorporées dans la première couche pour créer une rugosité dans ladite première couche. La rugosité peut être transférée à une deuxième couche en déposant la deuxième couche par-dessus la première couche de façon à épouser celle-ci. La rugosité de la deuxième couche correspond à la rugosité de la première couche, la première couche présentant une rugosité supérieure ou égale à environ 20 Å en moyenne quadratique (RMS).
Latest bibliographic data on file with the International Bureau